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  0.20-10.20v Datasheet PDF File

For 0.20-10.20v Found Datasheets File :: 38444    Search Time::2.187ms    
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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ... 590 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resis...20 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 260 ID ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... 560 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resis...20 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 260 ID ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...jmax G VDSS = 75V RDS(on) = 0.0078 S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advance...20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A m...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...efits q q q q q q RDS(on) = 0.0078 ID = 130AV Description Specifically designed for Automotive applications, this Stripe Planar desi...20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...efits q q q q q q RDS(on) = 0.0075 ID = 142A Description Specifically designed for Automotive applications, this Stripe Planar desig...20 1250 See Fig.12a, 12b, 15, 16 5.2 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...wer MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for Automotive applications, this HEXFET(R) p...20% more current than similar 175 C Tj max devices in the same package outline. This makes this part...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... Max. 20 4.2 3.4 17 2.5 1.6 0.02 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W www.irf.com ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteris...20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID ...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...20 75 0.6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 260 IRF236 2...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...20 152 58 67 13.9 56 nC nC VDS = 0.5BVDSS VDD = 100V ID = 13.9A RG = 9.1W ns SOURCE - DR...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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