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0.21a Datasheet PDF File

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				IRF[International Rectifier]
Part No.	IRFIZ34E IRFIZ34EPBF
OCR Text	...ed D VDSS = 60V RDS(on) = 0.042 G S ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
File Size	108.13K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIZ34N IRFIZ34NPBF
OCR Text	...ed D VDSS = 55V RDS(on) = 0.04 G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Lsolated Base Power HEX-pak Assembly Half Bridge Configuration Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
File Size	101.31K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIZ34V IRFIZ34VPBF
OCR Text	...r M3 srew Max. 20 14 120 30 0.20 20 81 30 3.0 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/...21A 30A RG 20V D .U .T IA S tp 0.0 1 + - VD D A 80 Fig 12a. Unclamped Inductive ...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
File Size	103.27K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ34VL IRFZ34VS
OCR Text	...0 seconds Max. 30 21 120 70 0.46 20 30 7.0 4.5 -55 to + 175 300 (1.6mm from case ) Units A W W/C V A mJ V/ns C Thermal Resistanc...21A 30A RG 20V D .U .T IA S tp 0.0 1 + - VD D A 80 Fig 12a. Unclamped Inductive ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Advanced Process Technology
File Size	126.38K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ34V
OCR Text	...r M3 srew Max. 30 21 120 70 0.46 20 81 30 7.0 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/...21A 30A RG 20V D .U .T IA S tp 0.0 1 + - VD D A 80 Fig 12a. Unclamped Inductive ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-220AB HEXFET? Power MOSFET
File Size	102.09K / 8 Page	View it Online	Download Datasheet

				apt
Part No.	APT10050LVR
OCR Text	0.500 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...21A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description	TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,21A I(D),TO-264AA
File Size	46.74K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFBA35N60C
OCR Text	...T VDSS 600V RDS(on) max 0.080 ID 35A Benefits Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster...21A 6.0 V VDS = VGS, ID = 250A 100 VDS = 600V, VGS = 0V A 500 VDS = 480V, VGS = 0V, TJ = 125C 100 V...
Description	HEXFET? Power MOSFET
File Size	45.33K / 3 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier] http://
Part No.	IRHNJ53034 IRHNJ57034 IRHNJ58034 IRHNJ54034 JANSF2N7480U3 JANSG2N7480U3 JANSH2N7480U3 JANSR2N7480U3
OCR Text	0.5) Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) IRHNJ54034 600K Rads (Si) IRHNJ58034 ...21A A VDS = VGS, ID = 1.0mA VDS > =15V, IDS = 21A A VDS=48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C V...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 抗辐射功率MOSFET表面贴装系统（SMD - 0.5
File Size	187.03K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315L
OCR Text	... VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...
Description	HEXFET Power MOSFET
File Size	201.56K / 10 Page	View it Online	Download Datasheet

For 0.21a Found Datasheets File :: 1118 Search Time::0.875ms
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