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ST Microelectronics
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| Part No. |
STP4NB50 STP4NB50FP
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| OCR Text |
...s drain-source voltage (v gs = 0) 500 v v dgr drain- gate voltage (r gs = 20 k w ) 500 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d = 1.9 a 2.5 2.8 w i d(on) on stat... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
143.05K /
7 Page |
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ST Microelectronics
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| Part No. |
P7NB60
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| OCR Text |
0 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using th...345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.6 a 1.0 1.2 w i d(o n) on state d... |
| Description |
Search --To STP7NB60FP
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| File Size |
144.86K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P7NB80FP
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| OCR Text |
... ds drain-source voltage (v gs =0) 800 v v dgr drain- gate voltage (r gs =20k w ) 800 v v gs gate-source voltage 30 v i d drain current (co...345v r ds(on) static drain-source on resistance v gs =10v i d = 3.2 a 1.2 1.5 w i d(o n) on state dr... |
| Description |
Search To STP7NB80
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| File Size |
136.25K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
P7NC80ZF
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| OCR Text |
... ds drain-source voltage (v gs =0) 800 v v dgr drain-gate voltage (r gs =20k w ) 800 v v gs gate- source voltage 25 v i d drain current (con...345v r ds(on) static drain-source on resistance v gs =10v,i d = 3.3 a 1.3 1.5 w symbol parameter tes... |
| Description |
Search --To STP7NC80Z
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| File Size |
441.81K /
13 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW6NB100
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| OCR Text |
...s drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w ) 1000 v v gs gate-source voltage 30 v i d drain curre...345v r ds(on) static drain-source on resistance v gs = 10 v i d = 2.7 a 2.5 2.8 w i d(on) on sta... |
| Description |
N-CHANNEL 1000V - 2.3 OHM - 5.4A - TO-247 POWERMESH MOSFET
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| File Size |
254.77K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STP11NM60FP
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| OCR Text |
0.4 w -11a to-220/to-220fp/d 2 pak/i 2 pak mdmesh ? power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/ m ...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.4 0.45 w symbol parameter t... |
| Description |
N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET
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| File Size |
195.16K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW9NB80
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| OCR Text |
0.85 w - 9.3a to-247 powermesh? mosfet n typical r ds (on) = 0.85 w n extremely high dv/dt capability n 100% avalanche tested n very low in...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.6a 0.85 1 w symbol parameter ... |
| Description |
N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET
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| File Size |
263.48K /
8 Page |
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it Online |
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