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0.40a Datasheet PDF File

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				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP83T03AGH-HF AP83T03AGH-HF-14
OCR Text	... recovery time i s =10a, v gs =0 v , - 21 - ns q rr reverse recovery charge di/dt=100a/s - 7 - nc notes: 1.pulse width limited by max. junc...40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t...
Description	Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic
File Size	57.05K / 4 Page	View it Online	Download Datasheet

				TY Semicondutor TY Semiconductor Co., Ltd
Part No.	2SK3467
OCR Text	0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2...40a) low gate charge q g = 55 nc typ. (i d =80a,v dd =16v,v gs =10v) built-in gate protection diode ...
Description	N-Channel MOSFET 4.5 V drive available Low on-state resistance RDS(on)1 = 6.0 m MAX.
File Size	65.29K / 1 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FGH40T65UPD
OCR Text	...resistance, junction to case - 0.56 o c / w r jc (diode) thermal resistance, junction to case - 1.71 o c / w r ja thermal resistance, ju...40a , v ge = 15v -1.652.3 v i c = 40a , v ge = 15v, t c = 175 o c -2.1- v dynamic chara...
Description	650V, 40A, Field Stop Trench IGBT 650 V, 40 A Field Stop Trench IGBT
File Size	296.26K / 10 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP9994GP-HF AP9994GP-HF-14
OCR Text	...ermal resistance, junction-case 0.5 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change...40a - - 2.95 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transco...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	57.08K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP9992GR-HF AP9992GR-HF-14
OCR Text	...ermal resistance, junction-case 0.75 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to chang...40a - - 3.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transco...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	129.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP9992GP-HF AP9992GP-HF-14
OCR Text	...ermal resistance, junction-case 0.75 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to chang...40a - - 3.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transcon...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	55.91K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	80CPTN015
OCR Text	... 80CPTN015 Units 80 15 2200 0.30 A V A V - 55 to 150 C Case Styles 80CPTN015 Base Common Cathode 2 1 3 2 Anode 1 ...40A @ 80A @ 40A @ 80A @ 40A Conditions TJ = 25 C TJ = 125 C TJ = 150 C VR = rated VR IRM M...
Description	15V 80A Schottky Discrete Diode in a TO-247AC package SCHOTTKY RECTIFIER
File Size	69.03K / 5 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text	... History Revision No. History 0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Finalized - ...40A to 25A - Changed ISB1(industrial) from 40A to 25A - Changed ISB1(Automotive) from 50A to 40A - C...
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
File Size	129.87K / 9 Page	View it Online	Download Datasheet

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