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  0.56a Datasheet PDF File

For 0.56a Found Datasheets File :: 498    Search Time::1.594ms    
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    400WP4KE440A

Leshan Radio Company
Part No. 400WP4KE440A
OCR Text ...3.5 15.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13....56A 62 62A 68 68A 75 75A 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45...
Description Transient Voltage Suppresor

File Size 90.15K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M85B2VR04 APT50M85LVR APT50M85B2VR APT50M85B2VR_04
OCR Text 0.085 POWER MOS V (R) MOSFET B2VR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFET...56A @ 25C VGS = 15V VDD = 250V ID = 56A @ 25C RG = 0.6 MIN TYP MAX UNIT 10500 1290 600 420 50 200...
Description POWER MOS V MOSFET

File Size 134.92K  /  4 Page

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    FQU2P40 FQD2P40 FQD2P40TF

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FQU2P40 FQD2P40 FQD2P40TF
OCR Text ... FQD2P40 / FQU2P40 -400 -1.56 -0.98 -6.24 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Sour...56A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -2.0A, di/dt 200A/s, VDD BVDSS, Starting TJ =...
Description 400V P-Channel QFET
400V P-Channel MOSFET

File Size 581.70K  /  9 Page

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    IRFR2405PBF IRFU2405PBF

IRF[International Rectifier]
Part No. IRFR2405PBF IRFU2405PBF
OCR Text ... VDSS = 55V G S RDS(on) = 0.016 ID = 56A Seventh Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined...
Description HEXFET Power MOSFET

File Size 214.67K  /  10 Page

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    FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851

INTERSIL[Intersil Corporation]
Part No. FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851
OCR Text ...eatures * 56A, 200V, rDS(ON) = 0.033 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of ...
Description From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET

File Size 81.00K  /  8 Page

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