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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ... V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characterist...100 V, IE = 0 VCE = -5 V, IC = -150 mA VCE = -5 V, I C = -500 mA (Pulse test) V V MHz pF I C =...
Description Silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2SB1026
OCR Text ... V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characterist...100 -5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 20 Max -- -- -- -10 200 -- -1 -0.9...
Description Silicon PNP Epitaxial

File Size 24.16K  /  5 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ... V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characterist...100 to 200 EK 160 to 320 2 2SB1027 Typical Output Characteristics Maximum Collector Dissipati...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ... V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characterist...100 to 200 2 2SB1028 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (...
Description Silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1030 2SB1030A
OCR Text ...ion voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) -30 -10 -3 -1 Ta=-25C 25C 75C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 -800 IB=-10mA -9mA -8mA -7mA ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 37.06K  /  2 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ...D* 1 1 Rating -120 -120 -7 -10 -15 10 80 150 -55 to +150 Unit V V V A A A W C C PC * Tj Tstg Electrical Characteristics (Ta ...100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA,...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ... -40 -25C -30 -20 -10 0 0 -2 -4 -6 -8 -10 -12 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emi...100 -30 -10 -3 -1 Ta=75C IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 - 0.1 - 0.3 hFE -- I...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2SB1048
OCR Text ... V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characterist...100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collector to Emitter Voltage VCE (V) Typi...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1050
OCR Text ...m Ratings max -100 -100 4.10.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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    2SB1059 2SB1059C

HITACHI[Hitachi Semiconductor]
Rohm Co., Ltd.
Part No. 2SB1059 2SB1059C
OCR Text ...V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -55 V, IE = 0 VEB = -6 V, IC = 0 VCE = -2 V, IC =...100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 -- -- -- VCE(sat) fT Cob V MHz pF ...
Description SMALL SIGNAL TRANSISTOR, TO-92
Silicon PNP Epitaxial
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 50V五(巴西)总裁| 1A条一(c)|2

File Size 16.80K  /  4 Page

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