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Infineon
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| Part No. |
SPB80N06S2L-11
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| OCR Text |
16 page 1 spp80n06s2l-11 spb80n06s2l-11 preliminary data optimos = == = power-transistor product summary v ds 55 v r ds ( on ) 11 m i d ...40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. p... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
517.74K /
8 Page |
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SIEMENS AG
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| Part No. |
SPD30N03S2L-08
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| OCR Text |
... 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 spd30n03s2l-08 i d safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spd30n03s2l-08 i d ... |
| Description |
OptiMOSPower-Transistor( MOS 型功率晶体管)
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| File Size |
90.21K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SPI73N03S2L-08
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| OCR Text |
... i d 0 2 4 6 8 10 12 14 16 18 20 22 24 m w 28 spp73n03s2l-08 r ds(on) v gs [v] = b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 8.4mOhm, 73A, LL
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| File Size |
523.66K /
8 Page |
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it Online |
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Infineon Technologies
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| Part No. |
11N65C3
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| OCR Text |
...15 18 21 v 27 v ds 0 4 8 12 16 20 24 28 32 a 40 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 7 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 ... |
| Description |
Search --To SPP11N65C3
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| File Size |
324.43K /
14 Page |
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it Online |
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