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  160-channel Datasheet PDF File

For 160-channel Found Datasheets File :: 34726    Search Time::3.047ms    
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    TPD1039S

Toshiba Semiconductor
Part No. TPD1039S
OCR Text ...20 10 0 ? 80 ? 40 0 40 80 120 160 i d = 1 ma 0 1 2 3 4 5 10 0.001 0.01 0.1 1 v ds = 10 v t ch = ? 40c 85 25 200 0 2 ...channel temperature t ch (c) r ds (on) ? t ch drain-source on resistance r ds (on) ( ...
Description Low-Side Switch for Motor, Solenoid and Lamp Drive

File Size 198.93K  /  9 Page

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    RJK1008DPP-E0 RJK1008DPP-E0-T2

Renesas Electronics Corporation
Part No. RJK1008DPP-E0 RJK1008DPP-E0-T2
OCR Text ...rain peak current i d (pulse) 160 a body-drain diode reverse drain current i dr 80 a body-drain diode reverse drain peak current i dr (pulse) 160 a avalanche current i ap note2 40 a channel dissipation pch note1 45 w c...
Description N-Channel Power MOSFET High-Speed Switching Use

File Size 80.86K  /  7 Page

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    Renesas Electronics Corporation.
Part No. SH7211F
OCR Text ...'s Top-Level Operating Speed of 160 MHz Incorporating high-performance SH-2A CPU core with excellent real-time control capability, enabling...channel and a 4 -channel serial communication interface with 16-stage FIFO, facilitating communicati...
Description single-chip microcontroller with on-chip flash memory
From old datasheet system

File Size 22.58K  /  4 Page

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    H5N3004P H5N3004P-E H5N3004P05

Renesas Electronics Corporation
Part No. H5N3004P H5N3004P-E H5N3004P05
OCR Text ...Admittance vs. Drain Current 160 120 40 0 -40 0 40 80 120 160 Case Temperature Tc (C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 Typical Capacitance vs. Drain to Source Vol...
Description nullSilicon N Channel MOS FET High Speed Power Switching

File Size 114.31K  /  7 Page

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    TPCP8102

Toshiba Semiconductor
Part No. TPCP8102
OCR Text ... 0.8 1.2 1.6 2.0 0 40 80 160 200 ? 80 ? 40 0 40 80 160 120 common source v ds = ? 10 v i d = ? 200 a pulse test 0 ? 1.0 ? 1.2 ? 0.8 ? 0.2 ? 0.4 ? 0.6 common source ta = 25c v gs = 0 v f = 1 mhz c iss c oss...
Description Field Effect Transistor Silicon MOS Type

File Size 257.78K  /  7 Page

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    FDW2601NZ FDW2601NZ08

Fairchild Semiconductor
Part No. FDW2601NZ FDW2601NZ08
OCR Text ...V ID = 8.2A Ig = 1.0mA 1840 250 160 2.6 20 12 2.7 5.1 30 18 pF pF pF nC nC nC nC FDW2601NZ Rev. A1 2 www.fairchildsemi.com FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET Switching Characteristics tON td(ON) t...
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 442.08K  /  11 Page

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    FDS568208 FDS5682

Fairchild Semiconductor
Part No. FDS568208 FDS5682
OCR Text ... = 7.5A 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.50 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 9. No...Channel PowerTrench(R) MOSFET Typical Characteristics TA = 25C unless otherwise noted 1.15 NORMA...
Description N-Channel PowerTrench® MOSFET 60V, 7.5A, 21mOhms
N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm

File Size 429.10K  /  12 Page

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    TPCP8101

Toshiba Semiconductor
Part No. TPCP8101
OCR Text ...(v) 0 ? 80 ? 40 0 40 80 120 160 40 80 120 160 v gs = ? 1.8 v ? 2.5 v ? 4.5 v i d = ? 1.4, ? 2.8, ? 5.6 a i d = ? 1.4, ? 2.8 a ? 5.6 a i d = ? 1.4 a ? 2.8 a common source pulse test ? 1 0 ? 10 ? 100 0.4 0....
Description Field Effect Transistor Silicon MOS Type

File Size 246.54K  /  7 Page

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