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GeneSiC Semiconductor, Inc.
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| Part No. |
GB02SLT12-252
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| OCR Text |
...us forward current i f t c 160 c 2 a rms forward current i f ( rms ) t c 160 c 3 a surge non-repetitive forward current, hal...mhz, t j = 25 c 131 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 1000 v, f = 1 mhz, t ... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
401.83K /
5 Page |
 View
it Online |
Download Datasheet
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GeneSiC Semiconductor, Inc.
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| Part No. |
GB02SLT12-220
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| OCR Text |
...us forward current i f t c 160 c 2 a rms forward current i f ( rms ) t c 160 c 3 a surge non-repetitive forward current, hal...mhz, t j = 25 c 131 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 1000 v, f = 1 mhz, t ... |
| Description |
Silicon Carbide Power Schottky Diode
|
| File Size |
394.54K /
5 Page |
View
it Online |
Download Datasheet |
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GeneSiC Semiconductor, Inc.
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| Part No. |
GB01SLT12-220
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| OCR Text |
...us forward current i f t c 160 c 1 a rms forward current i f ( rms ) t c 160 c 2 a surge non-repetitive forward current, hal...mhz, t j = 25 c 69 pf v r = 400 v, f = 1 mhz, t j = 25 c 10 v r = 1000 v, f = 1 mhz, t j... |
| Description |
Silicon Carbide Power Schottky Diode
|
| File Size |
383.46K /
5 Page |
View
it Online |
Download Datasheet |
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GeneSiC Semiconductor, Inc.
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| Part No. |
GB01SLT12-214
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| OCR Text |
...us forward current i f t c 160 c 1 a rms forward current i f ( rms ) t c 160 c 2 a surge non-repetitive forward current, hal...mhz, t j = 25 c 69 pf v r = 400 v, f = 1 mhz, t j = 25 c 10 v r = 1000 v, f = 1 mhz, t j... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
406.73K /
5 Page |
View
it Online |
Download Datasheet |
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SHENZHEN YONGERJIA INDUSTRY...
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| Part No. |
MMDT5451
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| OCR Text |
... v (br)cbo : 180/-160 v operating and storage junction temperature range t j , t stg : -55 to +150 ...mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 6 pf noise figure nf v... |
| Description |
Multi-Chip General Purpose TRANSISTOR (PNP and NPN)
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| File Size |
98.40K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
GeneSiC Semiconductor, Inc.
|
| Part No. |
GB02SLT12-214
|
| OCR Text |
...us forward current i f t c 160 c 2 a rms forward current i f ( rms ) t c 160 c 3 a surge non-repetitive forward current, hal...mhz, t j = 25 c 131 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 1000 v, f = 1 mhz, t ... |
| Description |
Silicon Carbide Power Schottky Diode
|
| File Size |
411.82K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
GeneSiC Semiconductor, Inc.
|
| Part No. |
GB01SLT12-252
|
| OCR Text |
...us forward current i f t c 160 c 1 a rms forward current i f ( rms ) t c 160 c 2 a surge non-repetitive forward current, hal...mhz, t j = 25 c 69 pf v r = 400 v, f = 1 mhz, t j = 25 c 10 v r = 1000 v, f = 1 mhz, t j... |
| Description |
Silicon Carbide Power Schottky Diode
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| File Size |
349.98K /
5 Page |
View
it Online |
Download Datasheet |
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Matsshita / Panasonic
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| Part No. |
XN5601 XN05601 0755
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| OCR Text |
...Hz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 - 0.5 V MHz pF typ max Unit V V V A A
I Electrical Characteristics
G
Tr1
Parameter
Collector to base voltage Collector to emitter voltage Emitter to b... |
| Description |
Composite Transistors
From old datasheet system
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| File Size |
89.99K /
6 Page |
View
it Online |
Download Datasheet |
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