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  18.0v. Datasheet PDF File

For 18.0v. Found Datasheets File :: 735    Search Time::4.078ms    
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    2SC2707

Inchange Semiconductor Company Limited
Part No. 2SC2707
OCR Text ...eakdown voltage- : v (br)ceo = 180v(min.) high power dissipation complement to type 2sa1147 applications designed for power switching amplifier and general purpose applications. absolute maximum ratings(t a =25 ) sym...
Description isc Silicon NPN Power Transistor

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    FUJI[Fuji Electric]
Part No. 2SK3777-01R
OCR Text ...S=25V VDS=25V VGS=0V f=1MHz VCC=180V ID=26.5A VGS=10V RGS=10 VCC=150V ID=53A VGS=10V IF=53A VGS=0V Tch=25C IF=53A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Min. 300 3.0 Typ. Max. 5.0 25 250 ...
Description N-CHANNEL SILICON POWER MOSFET

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    2SC508

Savantic, Inc.
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180V(min) APPLICATIONS *For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi...
Description Silicon NPN Power Transistors

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    2SC508

Inchange Semiconductor Company Limited
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180V(min) APPLICATIONS For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi...
Description Silicon NPN Power Transistors

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    2SC5993

Inchange Semiconductor Company Limited
Part No. 2SC5993
OCR Text ...kdown voltage- : v (br)ceo = 180v(min) complement to type 2sa2140 applications power amplification for tv vm circuit absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage...
Description isc Silicon NPN Power Transistor

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    ZXTN25100DFH

Zetex Semiconductors
Part No. ZXTN25100DFH
OCR Text 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m PD = 1.25W Complementary part number ZXTP25100DFH Description Advanced process capability and package design have been used to maximise the power handling ...
Description 100V, SOT23, NPN medium power transistor

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    TSD1857 TSD1857CKB0 TSD1857CTA3 TSD1857CTB0

Taiwan Semiconductor Company, Ltd
Part No. TSD1857 TSD1857CKB0 TSD1857CTA3 TSD1857CTB0
OCR Text ... product summary bv cbo 180v bv ceo 180v i c 1.5a v ce(sat) 0.6v @ i c / i b = 1a / 100ma features low v ce(sat) 0.6 @ i c / i b = 1a / 100ma (typ.) high bv ceo ordering information part no. package ...
Description Low Vcesat NPN Transistor

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    IRGP4050

International Rectifier
IRF
Part No. IRGP4050
OCR Text ... = 15V TJ = 25C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0 Energy losses include "tail" See Fig. 9, 10, 14 Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Of...
Description 250V Plasma Display Panel (PDP) IGBT Switch in a TO-247AC package
PDP Switch

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    ZVP2120A

Zetex Semiconductors
Part No. ZVP2120A
OCR Text ...= -50v i d=- 0.4a -100v -180v -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 80 60 40 20 100 180 160 140 120 200 80 60 40 20 100 180 160 140 120 200 40 20 60 c iss c rss 80 100 1.4 1.6 1.8 2.0 2.2 2.4 zvp2120a 3-427 3-426 typical characteristi...
Description P-channel MOSFET

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    2SC3519 2SC3519A

Inchange Semiconductor Company Limited
Part No. 2SC3519 2SC3519A
OCR Text ...geV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A *Good Linearity of hFE *Complement to Type 2SA1386/A APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT ...
Description isc Silicon NPN Power Transistors

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