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180.175 Datasheet PDF File

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				Infineon Technologies AG
Part No.	IPB05CN10NG10
OCR Text	...6 typ V GS(th) [V] 100 140 180 2 1.5 4 1 2 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ....175 C C [pF] 25 C, 98% 10 3 I F [A] 175 C, 98% Crss 101 102 101 0 20 40 60 8...
Description	OptiMOS鈩? Power-Transistor
File Size	436.25K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB065N06LG10
OCR Text	...A V GS(th) I DSS V DS=V GS, I D=180 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source ...175 C 25 C I D [A] 60 30 0 0 1 2 3 4 5 0 0 20 40 60 80 V GS [V] I D [A] Rev....
Description
File Size	412.25K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK763R8-80E
OCR Text	...alanche time 003aaf568 0 60 120 180 240 0 50 100 150 200 t mb ( c) i d (a) (1) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 00...175 c; see figure 9 1--v i d =1ma; v ds =v gs ; t j =-55c; see figure 9 --4.5v i dss drain leakage...
Description	N-channel TrenchMOS standard level FET
File Size	216.40K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB06CN10NG10 IPB06CN10NG IPI06CN10NG IPP06CN10NG
OCR Text	...A V GS(th) I DSS V DS=V GS, I D=180 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source ...175 C 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 1.93 page 5 2010-01-18 ...
Description	OptiMOS鈩? Power-Transistor
File Size	432.34K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB080N06NG10 IPP080N06NG
OCR Text	...V GS 30 28 26 24 6.5 V 200 180 160 22 20 5V 5.5 V R DS(on) [m] 140 18 16 14 12 10 I D [A] 120 100 80 60 40 5V 6V...175 C 25 C I D [A] 40 20 0 0 1 2 3 4 5 6 7 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.0...
Description	OptiMOS Power-Transistor Features Low gate charge for fast switching applications
File Size	413.09K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB085N06LG10 IPP085N06LG
OCR Text	...V GS10 V IPP085N06L G 200 180 160 140 90 80 70 60 120 P tot [W] 100 80 I D [A] 50 40 30 60 40 20 0 0 50 100 150 2...175 C 25 C I D [A] 0 0 1 2 3 4 5 0 0 20 40 60 80 100 120 140 V GS [V] I D [A] Rev. 1...
Description	OptiMOS Power-Transistor Features For fast switching converters and sync. rectification OptiMOS?/a> Power-Transistor Features For fast switching converters and sync. rectification
File Size	412.34K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB08CN10NG10 IPI08CN10NG
OCR Text	... 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C 25 C 175 C, 98% 103 102 C [pF] I F [A] 25 C, 98% Crss 102 101 101 0...
Description	OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
File Size	406.74K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB12CN10NG10 IPB12CN10NG IPD12CN10NG IPI12CN10NG IPP12CN10NG
OCR Text	...1 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C 175 C, 98% C [pF] 103 Coss I F [A] 25 C, 98% 101 102 Crss 101 0 20 40...
Description	OptiMOS鈩? Power-Transistor Features N-channel, normal level Very low on-resistance R DS
File Size	503.58K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IPB80N03S4L-0310 IPI80N03S4L-04 IPP80N03S4L-04
OCR Text	... 0 2 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 2.1 page 5 2010-03-08 IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4...175 C 25 C I F [A] 10 10 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 1 10 100 1000 V SD...
Description	OptiMOS-T2 Power-Transistor
File Size	159.25K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPD079N06L3G
OCR Text	... 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C, 98% 175 C 25 C C [pF] 103 Coss I F [A] 25 C, 98% 10 102 Crss 1 101 0...
Description	OptiMOS(TM)3 Power-Transistor
File Size	213.21K / 9 Page	View it Online	Download Datasheet

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