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  2-300v Datasheet PDF File

For 2-300v Found Datasheets File :: 10155    Search Time::1.766ms    
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    TM150SA-6

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM150SA-6
OCR Text ... (26) 3-9.0 K2 G2 13 2-6.5 K3 G3 K3 4 2.5 93 108 G3 2-1.0 Tab#110, t=0.5 4 A 2.5 4 K1 G1 K3 G3 CR3 CR2 K2 G2 CR1 K1 G1 K2 K1 12 LABEL A 8 21 45 60 34 K3 K2 K1 Feb.1999 MITSUBISHI THYRISTOR MODULE...
Description MEDIUM POWER GENERAL USE NON-INSULATED TYPE

File Size 52.59K  /  4 Page

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    TM90SA-6

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM90SA-6
OCR Text ... 3-6x7 18 20 20 1 K2 K3 K2 G2 2-6.5 13 26 K1 K3 G3 K3 80 93.5 K3 G3 CR3 K1 G1 K2 K1 K2 G2 CR2 CR1 K1 G1 Tab#110, t=0.5 4 2.2 A 9 6.5 LABEL A 19 41 56 Feb.1999 MITSUBISHI THYRISTOR M...
Description MEDIUM POWER GENERAL USE NON-INSULATED TYPE

File Size 51.13K  /  4 Page

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    TN2130 TN2130K1 TN2130ND

Supertex Inc
SUTEX[Supertex, Inc]
Part No. TN2130 TN2130K1 TN2130ND
OCR Text ... RDS(ON) (max) 25 VGS(th) (max) 2.4V Order Number / Package TO-236AB* TN2130K1 Die TN2130ND Product marking for SOT-23: N1T where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 448.29K  /  4 Page

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    TS636 TS636D TS636I TS636ID

STMICROELECTRONICS[STMicroelectronics]
Part No. TS636 TS636D TS636I TS636ID
OCR Text ...ic packages. APPLICATION Input 2 3 4 5 Gain Control Logic Decoder 12 Output 2 11 Power Down 10 -Vcc 9 AGND 8 DGND +Vcc1 1 14 +Vcc2 D SO1...300V/s). This means that the maximum input signal decreases at high frequency. SINGLE SUPPLY OPERATI...
Description DIFFERENTIAL VARIABLE GAIN AMPLIFIER FOR ADSL LINE INTERFACE

File Size 120.48K  /  9 Page

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    TS652 TS652D TS652ID

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. TS652 TS652D TS652ID
OCR Text ...op view) 14 +Vcc2 Input 1 2 Input 2 3 GC1 4 5 Gain Control Logic Decoder 13 Output 1 12 Output 2 11 Power Down 10 -Vcc 9 AGND 8 DGN...300V/s). This means that the maximum input signal decreases at high frequency. SINGLE SUPPLY OPERATI...
Description DIFFERENTIAL VARIABLE GAIN AMPLIFIER

File Size 73.32K  /  9 Page

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    TS902C3

FUJI[Fuji Electric]
Part No. TS902C3
OCR Text 2 1.32 9.3 0.5 1.5 Max 1.2 0.2 5.08 0.8 --0.1 2.7 +0.2 0.4 +0.2 Features Surface-mount device Low VF Super high speed sw...300V / 10A ) Characteristics Forward characteristics TS902C3 (10A) Reverse characteristics ...
Description LOW LOSS SUPER HIGH SPEED RECTIFIER

File Size 71.47K  /  3 Page

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    7MBP50TEA060

Fuji Electric
ETC[ETC]
Part No. 7MBP50TEA060
OCR Text ... Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector pow...300V,Tj=125C IC=50A Fig.1, Fig.6 VDC=300V, IC=50A Fig.1, Fig.6 Internal wiring inductance=50nH Main ...
Description Econo IPM series IGBT-IPM

File Size 342.73K  /  9 Page

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    7MBP75RTB060 7MBP75RTB-060

FUJI[Fuji Electric]
Part No. 7MBP75RTB060 7MBP75RTB-060
OCR Text ...a T.Fujihira MS6M 0653 2 22 a H04-004-06 7MBP75RTB060 1. Outline Drawing ( Unit : mm ) a Package type : P610 1 3 . 8 ...300V 20k Vin GND N Ic Figure 6. Switching Characteristics Test Circuit Icc A ...
Description IGBT - IPM

File Size 957.00K  /  23 Page

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    APT6020LVR

ADPOW[Advanced Power Technology]
Part No. APT6020LVR
OCR Text ...= 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 600 30 0.200 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, V...300V 12 VDS=480V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE...
Description POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.86K  /  4 Page

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    APT6025BVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6025BVFR
OCR Text ...ts Amps 600 25 100 30 40 370 2.96 -55 to 150 300 25 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...300V 12 VDS=480V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, TOTAL GAT...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm

File Size 69.66K  /  4 Page

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For 2-300v Found Datasheets File :: 10155    Search Time::1.766ms    
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