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Infineon Technologies
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Part No. |
H30T90
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OCR Text |
...voltage ( t p < 5 ms) v ge 20 25 v power dissipation, t c = 25 c p tot 428 w operating junction temperature t j -40...+175...0a 20a 40a 60a 80a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 1a 10a dc 10s t p... |
Description |
IGBT
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File Size |
285.54K /
12 Page |
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it Online |
Download Datasheet
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Infineon Technologies
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Part No. |
H30T100
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OCR Text |
...voltage ( t p < 5 ms) v ge 20 25 v power dissipation, t c = 25 c p tot 412 w operating junction temperature t j -40...+175...0a 10a 20a 30a 40a 50a 60a 70a 80a 90a t c =110c t c =80c i c , collector current 1v 10v 100v 100... |
Description |
IGBT
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File Size |
335.78K /
12 Page |
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it Online |
Download Datasheet
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Part No. |
RB051L-40TE25
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OCR Text |
...40(te25) rb051l-40(te25) rb081l-20(te25) package i o /vrm vf(at if) pmds (sma) 1a/40v 3a/40v 5a/25v 0.35v typ(1a) 0.35v typ(3a) 0.35v typ(5a...0a vr=20v standard 0.45v max. 200 a max. schottky barrier diode (silicon epitaxial planer) rb491d... |
Description |
3 A, 40 V, SILICON, RECTIFIER DIODE
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File Size |
249.15K /
3 Page |
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it Online |
Download Datasheet
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Price and Availability
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