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200v ms Datasheet PDF File

For 200v ms Found Datasheets File :: 3384 Search Time::2.312ms
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				http:// Intersil Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001
OCR Text	...ltage [V] Ciss 8 VDS = 200v Capacitance [pF] 300 Coss 200 6 Crss 100 4 Notes : 1. VGS = 0 V 2. f = 1 MHz ...ms 10 0 10 ms DC 10 -1 Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 ...
Description	250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A 250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A
File Size	644.81K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP001 IRFR220BTFFP001 IRFR220BTMFP001 IRFR220BTMNL
OCR Text	200v N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...ms 10 0 DC 10 -1 Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 -2 ...
Description	200v N-Channel B-FET / Substitute of IRFR220 & IRFR220A 200v N-Channel B-FET / Substitute of IRFU220 & IRFU220A 200v N-Channel MOSFET
File Size	663.08K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFU230B IRFR230B IRFU230BTLTUFP001
OCR Text	200v N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...ms 10 ms DC 10 0 Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 -1 ID...
Description	200v N-Channel B-FET / Substitute of IRFU230A 200v N-Channel MOSFET
File Size	636.60K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] International Rectifier Intersil Corporation http://
Part No.	IRFU320B IRFR320B IRFU320BTU IRFR320BTF IRFR320BTM
OCR Text	... VDS = 80V 10 800 VDS = 200v VGS, Gate-Source Voltage [V] 8 VDS = 320V Capacitance [pF] 600 Ciss 6 400 Co...ms 10 0 10 ms DC 10 -1 Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 ...
Description	400V N-Channel B-FET / Substitute of IRFR320 & IRFR320A 400V N-Channel B-FET / Substitute of IRFU320 & IRFU320A 400V N-Channel MOSFET
File Size	671.13K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	SMTHBT200 3083
OCR Text	...IH = 150 mA BREAKDOWN VOLTAGE : 200v min BREAKOVER VOLTAGE : 265V max SMC DESCRIPTION This protection device has been especially desig...ms max. 4/6 SMTHBT200 Fig 1 : Non repetitive surge peak on-state current versus overload durati...
Description	TRISILTM FOR LINE CARD PROTECTION From old datasheet system
File Size	55.72K / 6 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	TPDV1025 TPDV1225 TPDV625 TPDV825 TPDV625---1225
OCR Text	...VD=67%VDRM gate open (dV/dt)c = 200v/s (dV/dt)c = 10V/s V/s (dI/dt)c * Tj=125C MIN 20 88 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TPDV 625 ---> 1225 Fig.1 : Maximum R...
Description	ALTERNISTORS
File Size	65.46K / 5 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	TPDV1040 TPDV1240 TPDV640 TPDV840 TPDV640---1240
OCR Text	...VD=67%VDRM gate open (dV/dt)c = 200v/s (dV/dt)c = 10V/s V/s (dI/dt)c * Tj=125C MIN 35 142 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TPDV 640 ---> 1240 Fig.1 : Maximum ...
Description	ALTERNISTORS
File Size	66.32K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TPI12011N TPI12011NRL TPI8011N TPI8011NRL
OCR Text	...OLTAGE : TPI80N : 150V TPI120 : 200v DESCRIPTION Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalen...ms t =1 s Value 30 40 90 8 3.5 - 55 to + 150 150 260 Unit A ITSM Non repetitive surge peak on-...
Description	TRIPOLAR PROTECTION FOR ISDN INTERFACES
File Size	55.42K / 7 Page	View it Online	Download Datasheet

				POSEICO SPA POSEICO[Power Semiconductors]
Part No.	AT681 AT681S60
OCR Text	...inear ramp up to 75% of VDRM VD=200v, gate source 20V, 10 ohm dV/dt = 20 V/s linear up to 80% VDRM di/dt=-60 A/s, I= 1000 A VR= 50 V 120 120 25 120 25 25 100 500 5 650 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P G...
Description	PHASE CONTROL THYRISTOR
File Size	42.26K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	DTC8-N DTC8G-N DTC8C-N DTC8E-N
OCR Text	... + - ITM=12A 1.5 Tj=125C, VD=200v (C), 10 400V (E to G) RL=100 50 VD=12V, RL=20 30 VD=12V, RL=20 30 VD=12V, RL=20 50 VD=12V, RL=20 30 VD=...ms IGT(tw) / IGT - % Gate Trigger Pulse Width, tw - s No products described or contained he...
Description	8A Bidirectional Thyristor
File Size	244.80K / 3 Page	View it Online	Download Datasheet

For 200v ms Found Datasheets File :: 3384 Search Time::2.312ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |