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International Rectifier, Corp.
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Part No. |
JANSH2N7269U
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OCR Text |
...rhn7250 100k rads (si) 0.1 ? 26a jansr2n7269u irhn3250 300k rads (si) 0.1 ? 26a jansf2n7269u irhn4250 600k rads (si) 0.1 ? 26a jansg2n7269u irhn8250 1000k rads (si) 0.1 ? 26a jansh2n7269u for footnotes refer to the last page irh... |
Description |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 200000kRad高可靠性单个N -沟道工贸硬化的贴片MOSFET 1封装
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File Size |
278.93K /
12 Page |
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International Rectifier, Corp.
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Part No. |
JANSH2N7269U
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OCR Text |
26a irhn8250 200v 0.100 w 26a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- ... |
Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
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File Size |
276.10K /
12 Page |
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it Online |
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IXYS Corporation
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Part No. |
IXFB52N90P
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OCR Text |
... IF = IS, VGS = 0V, Note 1 IF = 26a, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 52 208 1.5 300 1.8 26 A A V ns C A
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test C... |
Description |
Polar Power MOSFET HiPerFET 52 A, 900 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
116.26K /
4 Page |
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Part No. |
MT8VDDT3264HDG-40BXX MT8VDDT3264HDY-265XX MT8VDDT3264HDG-335XX MT8VDDT6464HDG-265XX
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OCR Text |
... (133 mhz), 266 mt/s, cl = 2 1 -26a ? 7.5ns (133 mhz), 266 mt/s, cl = 2.5 1 -265 pcb height: 31.75mm (1.25in) notes: 1. the values of t rcd and t rp for -335 modules show 18ns to al ign with industry specifications; actual ddr sdram dev... |
Description |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
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File Size |
390.85K /
13 Page |
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it Online |
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Price and Availability
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