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  2a 800v Datasheet PDF File

For 2a 800v Found Datasheets File :: 1287    Search Time::3.594ms    
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    FS5KM-16A FS5KM-16

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS5KM-16A FS5KM-16
OCR Text ...S = 0V ID = 1mA, VDS = 10V ID = 2a, VGS = 10V ID = 2a, VGS = 10V ID = 2a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 30 -- -- 2 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.76 3.52 5.0 1050 100 20 20 18 110 35 1...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 49.83K  /  4 Page

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    KTC4526

KEC Holdings
KEC(Korea Electronics)
Part No. KTC4526
OCR Text ... V V V pF MHz S I B1 =0.2a , I B2 =-0.4A < DUTY CYCLE = 1% VCC =400V 2000. 4. 10 Revision No : 0 1/3 KTC4526 IC 1.2 COLLECTOR CURRENT I C (A) VCE 100 I B =100mA I B =80mA I =60mA B h FE I B =120mA - ...
Description TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)

File Size 80.70K  /  3 Page

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    SPA11N80C3 SPP11N80C3

Infineon Technologies AG
Part No. SPA11N80C3 SPP11N80C3
OCR Text ...nche energy, single pulse ID=2.2a, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, re...800v, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. ma...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800v C2 marking to C3. 800v C2 ...
Cool MOS⑩ Power Transistor

File Size 250.35K  /  12 Page

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    PAH2008 PAT2008

NIEC[Nihon Inter Electronics Corporation]
Part No. PAH2008 PAT2008
OCR Text ... IO, Tj=125C IG=300mA, diG/dt=0.2a/s * Unit A A A A2s A/s 200 314 4000 8000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2000 V M6 Screw 2.5 to 3.5 N*m M8 Screw 9.0 to 10.0 Electrical * ...
Description THYRISTOR MODULE

File Size 260.30K  /  5 Page

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    Sanyo
Part No. 2SC4429
OCR Text ...L=1mH, Clamped ton IC=6A, IB1=1.2a, IB2=-2.4A, RL=66.7, VCC=400V tstg tf IC=6A, IB1=1.2a, IC=6A, IB1=1.2a, IB2=-2.4A, RL=66.7, IB2=-2.4A, RL=66.7, VCC=400V VCC=400V Switching Time Test Circuit No.2852-2/4 2SC4429 No.2852-3/4 ...
Description NPN Triple Diffused Planar Silicon Transistor 800v/8A Switching Regulator Applications

File Size 105.91K  /  4 Page

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    http://
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SD2580
OCR Text ...C=1A VCE=5V, IC=8A IC=6A, IB1=1.2a, IB2=-2.4A 15 5 Conditons Ratings min typ max 5 1.5 30 8 0.3 s Unit V V Switching Time Test Circuit PW=20s DC1% INPUT RB VR 50 + 100F VBE=-2V + 470F VCC=200V RL=33.3 IB1 IB2 OUTPUT 10 9 I C - VCE...
Description Color TV Horizontal Deflection Output Applications
NPN Triple Diffused Planar Silicon Transistor

File Size 42.56K  /  4 Page

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    FS2KM-16A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS2KM-16A
OCR Text .................................. 2a Viso ................................................................................ 2000V q q GAT...800v, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 48.09K  /  4 Page

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    NTE[NTE Electronics]
Part No. NTE56049 NTE56050
OCR Text ...ering, dIT/dt (ITM = 6A, IG = 0.2a, dIG/dt = 0.2a/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...800v may be applied without damage, but the TRIAC may switch to the on-State. The rate-of-rise of cu...
Description TRIAC / 4A Low Logic Level
TRIAC, 4A Low Logic Level

File Size 19.44K  /  2 Page

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    NIEC[Nihon Inter Electronics Corporation]
Part No. PBH308AC
OCR Text ... IO, Tj=125C IG=200mA, diG/dt=0.2a/s * Unit A A A2s A/s 30 600 1800 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2500 V Greased M4 Screw 0.9 to 1.6 N*m M4 Screw 1.3 to 1.9 Insertion/Pulling...
Description THYRISTOR MODULE

File Size 175.72K  /  4 Page

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    PDH2008 PDT2008

Nihon Inter Electronics Corporation
Part No. PDH2008 PDT2008
OCR Text ... IO, Tj=125C IG=300mA, diG/dt=0.2a/s * Unit A A A A2s A/s 200 314 4000 80000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2000 V M6 Screw 2.5 to 3.5 N*m M8 Screw 9.0 to 10.0 Value per 1 ...
Description THYRISTOR MODULE 200A / 800v

File Size 261.50K  /  5 Page

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For 2a 800v Found Datasheets File :: 1287    Search Time::3.594ms    
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