32.0-45.0 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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32.0-45.0 Datasheet PDF File

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				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BA...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...0.16 0.17 0.19 0.21 0.24 0.28 0.32 0.36 0.41 0.47 0.24 0.24 0.27 0.30 0.32 0.35 0.35 0.35 0.37 0.39 0.43 0.48 0.52 0.58 0.63 0.72 0.77 0.84 0.94 1.03 1.12 1.22 1.34 1.47 1.62 1.80 3.7 4.2 4.6 5.1 5.8 6.4 7.0 7.7 8.5 9.4 12.0 17.4 1750 1650 ...
Description	Inductors Epoxy Conformal Coated, Axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...) -B4.69 (.1 85) 4.20 (.1 65) 1.32 (.052) 1.22 (.048) 4 15 .24 (.600) 14 .84 (.584) 1.15 (.0 45) MIN 1 2 3 LE A D A S SIG N ME NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14.09 (.555) 13.47 (.530) 4 .06 (.160 ) 3 .55...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...r 10 seconds Mounting torque, 6-32 or M3 srew Max. 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm...0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 01/17/02 IRF3710 Electrical Cha...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...S = 0V VDS = 10V = 1.0MHz Max. 32 16 Units mJ A ns Avalanche Characteristics EAS IAR d Diode Characteristics Parameter I...0 32 19 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction dio...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...r 10 seconds Mounting Torque, 6-32 or M3 screw i Parameter Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 0.45 --- 62 40 Units C/W Junction-to-Ambient (PCB Mount) j i i --- 0....
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3808 IRF3808PBF
OCR Text	...r 10 seconds Mounting Torque, 6-32 or M3 screw Max. 140V 97V 550 330 2.2 20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm...0.50 --- Max. 0.45 --- 62 Units C/W HEXFET(R) is a registered trademark of International ...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?
File Size	129.31K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	... I D = 16 A =8A Min. Typ. 12 20 32 9 13 Max. 16 28 44 Unit ns ns nC nC nC V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter ...0 di/dt = 100 A/s o T j = 150 C 150 0.8 10 Recovery I SD =16 A V DD = 30 V Recovery Recovery Test Co...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through are on page 10 Notes ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...(Note 1) IRF840B 500 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

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