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40-40mm Datasheet PDF File

For 40-40mm Found Datasheets File :: 2326 Search Time::1.984ms
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				INFINEON[Infineon Technologies AG]
Part No.	SPD04N60C3 SPU04N60C3
OCR Text	... D = 0 , T C=25C 10 2 W 45 40 A 10 1 Ptot 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID 10 0 35 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 1...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS™ Power Transistor Cool MOS& Power Transistor Cool MOS Power Transistor
File Size	284.38K / 12 Page	View it Online	Download Datasheet

				http:// INFINEON[Infineon Technologies AG]
Part No.	SPD04N60S5 SPDU04N60S5 SPPB04N60S5 SPU04N60S5
OCR Text	...0 , T C=25C 10 1 W A 45 40 Ptot 10 0 30 25 20 15 10 5 0 0 20 40 60 80 100 120 10 -1 ID 35 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 ...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
File Size	264.52K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPD50N03S2-07
OCR Text	... S 2170 pF 1000 230 21 54 40 38 ns VDD =15V, VGS =10V, ID =50A, RG =6.8 - 7.9 14.1 35 5.2 10.5 21.1 46.5 - nC V(plateau) VDD =24V, ID =50A V Reverse Diode Inverse diode continuous forward current Inv. diode dir...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL
File Size	261.42K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	SPD50N03S2L-06
OCR Text	...0N03S2L-06 150 W A 45 40 120 110 P tot 100 90 80 70 60 ID 100 120 140 160 C 190 35 30 25 20 50 40 30 20 10 0 0 20 40 60 80 5 0 0 20 40 60 80 15 10 100 120 140 160 C 190 TC TC 3 Safe operating area ID...
Description	OptiMOS Power-Transistor Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL
File Size	262.34K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPN04N60S5
OCR Text	... Values typ. 1 600 325 15 20 35 40 20 130 30 max. - Unit S pF Effective output capacitance,2) Co(er) energy related Effective outpu...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
File Size	236.40K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP10N10 SPB10N10 SPI10N10
OCR Text	...A - Values typ. max. 3 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static C...40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description	Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL SIPMOS Power-Transistor SIPMOS功率晶体
File Size	480.13K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCP72M Q62702-C2517 SIEMENSAG-Q62702-C2517
OCR Text	... 600 400 200 0 0 TA 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC K/W - RthJS 10 1 1...
Description	PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)
File Size	28.76K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BCR146 Q62702-C2260
OCR Text	... 0.3 2.6 4 62 2.36 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 1.2 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input o...
Description	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	35.51K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCR183S Q62702-C2377 BCR183SQ62702C2377
OCR Text	...0.3 1.5 2.5 13 1.1 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input o...
Description	TRANSISTOR DIGITAL SOT363 PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	43.88K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BCR183W Q62702-C2276
OCR Text	...0.3 1.5 2.5 13 1.1 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input o...
Description	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) From old datasheet system
File Size	34.79K / 4 Page	View it Online	Download Datasheet

For 40-40mm Found Datasheets File :: 2326 Search Time::1.984ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |