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Samsung Semiconductor Co., Ltd.
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Part No. |
KM23V4000D
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Description |
4m-Bit (512kx8) CMOS Mask ROM(4m(512kx8) CMOS掩膜ROM) 4分位512kx8)的CMOS掩模ROM分位512kx8)的CMOS掩膜光盘
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File Size |
72.64K /
4 Page |
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Part No. |
ST6294m8
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Description |
NAND flash memory; Density: 8Gb; Organization: 1Gbx8; bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP NAND flash memory; Density: 8Gb; Organization: 1Gbx8; bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
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File Size |
366.04K /
14 Page |
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it Online |
Download Datasheet
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Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI010 S29GL064A10TFIR12 S29GL032A10BFIW30 S29GL064A90FFIR22 S29GL064A90TFIR60 S29GL064A90FAIR50 GL032A10BAIW43 IR80 S29GL064A10TFIR70 S29GL064A90TFIR73
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Description |
4m X 16 flash 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode flash memory Featuring 200 nm MirrorBit Process Technology 1M X 16 flash 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode flash memory Featuring 200 nm MirrorBit Process Technology 4m X 16 flash 3V PROM, 100 ns, PDSO56 2M X 16 flash 3V PROM, 100 ns, PBGA56 4m X 16 flash 3V PROM, 90 ns, PBGA64 flash - NOR IC; memory Type:flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; memory Configuration:64K x 16; memory Size:64mB; NOR flash Type:Page Mode Access RoHS Compliant: Yes 4m X 16 flash 3V PROM, 90 ns, PDSO48 4m X 16 flash 3V PROM, 100 ns, PDSO48
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File Size |
2,445.39K /
95 Page |
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it Online |
Download Datasheet
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Price and Availability
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