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For 5.8us Found Datasheets File :: 469 Search Time::1.328ms
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				HYNIX[Hynix Semiconductor]
Part No.	GMS81C3004
OCR Text	...M ............................4 5. PIN FUNCTION......................................5 6. PORT STRUCTURES............................7 7. EL...8us, 15.2us at 4.19MHz - 61us, 244us, 488us, 1.95ms at 32.768KHz * 51 Programmable I/O pins (Include...
Description	CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH LCD DRIVER
File Size	786.42K / 90 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
Part No.	HYMP112S64MP8-E4 HYMP112S64LMP8-C4 HYMP112S64LMP8-C5 HYMP112S64LMP8-E3 HYMP112S64LMP8-E4 HYMP112S64MP8 HYMP112S64MP8-C4 HYMP112S64MP8-C5 HYMP112S64MP8-E3
OCR Text	...Programmable CAS Latency 3 / 4 /5 supported * * Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and self refresh supported 7.8us refresh period at Lower than TCASE 85, 3.9us( 85 TCASE 95) * * Serial ...
Description	DDR2 SDRAM SO-DIMM SCREW LOCKS FEMALE SETS SCREW LOCKS MALE 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
File Size	398.36K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H1G0638C-UC_LB0 K4H1G0738C-UC_LA2 K4H1G0638C-UC/LA2 K4H1G0638C-UC/LB0 K4H1G0738C-UC/LA2 K4H1G0738C-UC/LB0
OCR Text	.................................. 5 5.0 Package Physical Dimension ..............................................................................8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II Pb-Free pack...
Description	Stacked 1Gb C-die DDR SDRAM Specification
File Size	336.97K / 23 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H1G0438M-TC_LB0 K4H1G0438M-TC_LB3 K4H1G0838M-TC_LA2 K4H1G0838M-TC_LB0 K4H1G0438M-TC/LB0 K4H1G0838M-TC/LB0 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB3 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3
OCR Text	...16 IDD current spec. Revision 0.5 (November, 2003) - Modified IDD2N current spec. Revision 0.6 (February, 2004) - Complete DC current spec. ...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description	1Gb M-die DDR SDRAM Specification
File Size	203.73K / 23 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H1G0838M-ULB3 K4H1G0438M-LA2 K4H1G0438M-LB0 K4H1G0438M-LB3 K4H1G0438M-UC K4H1G0438M-UC_LA2 K4H1G0438M-UC_LB0 K4H1G0438M-UC_LB3 K4H1G0438M-UC0 K4H1G0438M-UC2 K4H1G0438M-UC3 K4H1G0438M-UCA2 K4H1G0438M-UCB0 K4H1G0438M-UCB3 K4H1G0438M-ULA2 K4H1G0438M-ULB0 K4H1G0438M-ULB3 K4H1G0838M-LA2 K4H1G0838M-LB0 K4H1G0838M-LB3 K4H1G0838M-UC_LA2 K4H1G0838M-UC_LB0 K4H1G0838M-UC_LB3 K4H1G0838M-UC0 K4H1G0838M-UC2 K4H1G0838M-UC3 K4H1G0838M-UCA2 K4H1G0838M-UCB0 K4H1G0838M-UCB3 K4H1G0838M-ULA2 K4H1G0838M-ULB0
OCR Text	...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * tRFC(Refresh row cycle time) = 120ns * Maximum burst refresh...
Description	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
File Size	203.93K / 23 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_LAA K4H510638E-TC_LB0 K4H510738E K4H510738E-TC_LA2 K4H510738E-TC_LAA
OCR Text	...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 66pin TSOP II package D...
Description	Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
File Size	188.40K / 22 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K4H510838B-NC_LB0 K4H510838B-NC_LB3 K4H510838B-NC_LCC K4H510838B-VC_LA2 K4H510838B-VC_LB0 K4H510838B-VC_LB3
OCR Text	...................................5 5.0 Package Physical Dimension ..............................................................................8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-400 (Leade...
Description	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
File Size	341.67K / 24 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
OCR Text	...atency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except d...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description	DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	195.42K / 18 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
OCR Text	...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA package DDR...
Description	256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	241.25K / 24 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4H560438E-NC_LB0 K4H560438E-NC_LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560438E-NCB3 K4H560438E-NLA2 K4H560438E-NLB0 K4H560438E-NLB3 K4H560838E-NC_LA2 K4H560838E-NC_LB0 K4H560838E-NC_LB3 K4H560838E-NCA2 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLA2 K4H560838E-NLB0
OCR Text	...y programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM ar...8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-300 packag...
Description	256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
File Size	212.16K / 24 Page	View it Online	Download Datasheet

For 5.8us Found Datasheets File :: 469 Search Time::1.328ms
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