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5.9ghz Datasheet PDF File

For 5.9ghz Found Datasheets File :: 807 Search Time::1.438ms
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				http:// AD[Analog Devices] adi Analog Devices, Inc.
Part No.	AD8315ACP AD8315ARM AD8315ARM-REEL AD8315ARM-REEL7 AD8315ACP-REEL7 AD8315 AD8315ACP-EVAL AD8315ACP-REEL AD8315-EVAL
OCR Text	50 dB GSM PA Controller AD8315 FEATURES Complete RF Detector/Controller Function >50 dB Range at 0.9 GHz (-49 dBm to +2 dBm re 50 ) Accurat...9GHz 0.9GHz -10 -20 0.1GHz -30 -40 0.9GHz -50 -60 1.9GHz -70 -80 0.2 2.5GHz 3 -7 -17 -27 -37 -...
Description	50 dB GSM PA Controller IC,AMP POWER CONTROLLER,BIPOLAR,LLCC,8PIN
File Size	601.68K / 20 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 ATF-501P8
OCR Text	... Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) * Excellent uniformity in product specifications * Sma...9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz an...
Description	ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
File Size	180.51K / 22 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP280W Q62702-F1504
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-12-1996 BFP 280W Electrical Characteristics at TA = 25C, unless...9GHz VCE = Parameter 22 10V 2V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 17 dB...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
File Size	59.70K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP280 Q62702-F1378
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFP 280 Electrical Characteristics at TA = 25C, unless ...9GHz VCE = Parameter 22 10V 2V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管（对于低噪音，在移动通信系统的低功耗放大器 NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems) From old datasheet system
File Size	60.12K / 7 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LT5534ESC6 LT5534
OCR Text	...le Settling Time Single 2.7V to 5.25V Supply Low Supply Current: 7mA Shutdown Current: 0.1A Tiny 6-Lead SC70 Package APPLICATIO S s s s ...9GHz 2.5GHz 1.6 1.2 0.8 0.4 0 -70 -60 0 2.5GHz -1 -2 -3 -70 1.9GHz VOUT (V) -50 -40 -30 ...
Description	50MHz to 3GHz RF Power Detector with 60dB Dynamic Range Amplifier
File Size	185.69K / 8 Page	View it Online	Download Datasheet

				New Japan Radio njr
Part No.	NJG1309VB2
OCR Text	...TION V Type (Top View) 1 2 3 4 5 6 7 8 9 10 DC/DC Converter CR Oscillator 20 19 18 17 16 15 14 13 12 11 Pin Connection 1.VSTB 2.+VGG...9GHz, Zs=Zl=50, Ta=25C) PARAMETER perating Frequency Drain Voltage 1 Drain Voltage 2 Standby Termina...
Description	TRANSMITTING POWER AMPLIFIER GaAs MMIC
File Size	570.22K / 17 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP640
OCR Text	...ector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, pulse mea...9GHz Power Gain Gma, Gms = (f), \|S21\| = f (f) VCE = 3V, IC = 30mA 55 dB 26 24 22 20 18 1...
Description	NPN Silicon Germanium RF Transistor
File Size	270.21K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR340F
OCR Text	...ector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V hFE 60 130 200...9GHz VCE = parameter 22 dB 20 19 18 f = 1.8GHz VCE = parameter 20 5V 3V 2V 1V 0.75V mA 5...
Description	RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
File Size	150.45K / 8 Page	View it Online	Download Datasheet

				New Japan Radio njr
Part No.	NJG1519KC1
OCR Text	...w) Orientation Mark 1 2 3 4 5 10 9 8 7 6 Pin connection 1. P1 2. VCTL1 3. GND 4. VCTL2 5. P2 6. P3 7. VCTL3 8. PC 9. VCTL4 10. P4 ...9GHz, PIN =34dBm f=0.9GHz, PIN =34dBm f=1.9GHz, PIN =32dBm f=0.9GHz, PIN =34dBm f=1.9GHz, PIN =32dBm...
Description	SP4T SWITCH GaAs MMIC
File Size	471.44K / 16 Page	View it Online	Download Datasheet

				RF MICRO DEVICES
Part No.	RF2472
OCR Text	...y small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space. 1.60 + 0.01 RF2472 2...9GHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (33...
Description	2.4GHz LOW NOISE AMPLIFIER WITH ENABLE
File Size	197.01K / 8 Page	View it Online	Download Datasheet

For 5.9ghz Found Datasheets File :: 807 Search Time::1.438ms
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