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NXP Semiconductors N.V.
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Part No. |
BLF6G15L-40RN BLF6G15LS-40RN
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OCR Text |
...or 5. thermal characteristics 6. characteristics 7. application information table 5. thermal characteristics symbol parameter conditio...745 0.130 0.115 0.6 0.02 0.007 0.004 0.045 0.035 0.067 0.057 0.805 0.795 0.39 0.38 0.01 a d f d 1 c ... |
Description |
Power LDMOS transistor BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;BLF6G15LS-40RN<SOT1135B (CDFM2)|<<http://www.nxp.com/packages/SOT1135B.html<1<Always Pb-free,;
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File Size |
72.32K /
9 Page |
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Fujitsu Limited
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Part No. |
FTR-P1 FTR-P1CP009W1 FTR-P1CP012W1 FTR-P1CN010W1 FTR-P1CN009W1 FTR-P1CP010W1 FTR-P1CN012W1 FUJITSULIMITED-FTR-P1CP012W1
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OCR Text |
...ontact gap n : 0.3 mm gap p : 0.6 mm gap (d) nominal voltage 009 : 9 vdc 010 : 10 vdc 012 : 12 vdc (e) contact material w1 : silver-tin ox...745-4900 fax: (1-408) 745-4970 email: marcom@fcai.fujitsu.com web: www.fcai.fujitsu.com europe fujit... |
Description |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.4 to 3.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.9 to 3.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.3 to 3.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.1 to 3.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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File Size |
66.35K /
7 Page |
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Mitsubishi Electric Corporation
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Part No. |
MGF0915A
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OCR Text |
...ck side pattern 2.5 (unit:mm) 0.6 2.0 0.8 (1) (3) gate mark 2.8 1.20 reference plane reference plane freq. k mag/msg (mhz) (mag) (ang) (mag)...745 -179.06 1.27 14.25 3400 0.939 177.37 0.934 46.34 0.020 37.37 0.749 -179.19 1.34 13.19 3800 0.935... |
Description |
L & S BAND GaAs FET[ SMD non - matched ]
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File Size |
1,318.88K /
48 Page |
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Download Datasheet
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