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  64m x 4 ddr dram 0 7 ns pdso66 Datasheet PDF File

For 64m x 4 ddr dram 0 7 ns pdso66 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    0000'>xilin0000'>x, Inc.
0000'>xILIN0000'>x INC
Part No. W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M72R8B-5AR-PB1 W1D128M72R8B-5AE-PB1 W1D256M72R8B-5AL-PA2 W1D256M72R8B-5AR-PA1 W1D32M72R8B-5AE-HB1 W1D32M72R8A-5AP-HB1 W1D256M72R8B-5AP-HB1 W1D0000'>60000'>4m72R8A-5AP-HB1 W1D0000'>60000'>4m72R8B-5AP-HB1 W1D128M72R8A-5AP-HB1
Description 128M 0000'>x 8 0000'>ddr 0000'>dram MODULE, 0.5 ns, DMA20000'>40 MO-237, DIMM-20000'>40
256M 0000'>x 8 0000'>ddr 0000'>dram MODULE, 0.5 ns, DMA20000'>40
32M 0000'>x 8 0000'>ddr 0000'>dram MODULE, 0.5 ns, DMA20000'>40
32M 0000'>x 8 0000'>ddr 0000'>dram MODULE, 0.6 ns, DMA20000'>40
0000'>60000'>4m 0000'>x 8 0000'>ddr 0000'>dram MODULE, 0.5 ns, DMA20000'>40

File Size 254.55K  /  11 Page

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    Toshiba Corporation
Toshiba, Corp.
Part No. TCS59SM800000'>4BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT-80 TCS59SM816BFT-80 TCS59SM800000'>4BFT-75 TCS59SM800000'>4BFTL-70
Description 8M×0000'>4Banks×8Bits Synchronous 0000'>dram(0000'>4M×8位同步动态RAM)
8M×0000'>4Banks×8Bits Synchronous 0000'>dram(0000'>48M×8位同步动态RAM)
0000'>4M×0000'>4Banks×16Bits Synchronous 0000'>dram(0000'>40000'>4M×16位同步动态RAM) 0000'>4米0000'>4Banks × 16位同步0000'>dram米16位同步动态RAM)的
16M×0000'>4Banks×0000'>4Bits Synchronous 0000'>dram(0000'>46M×0000'>4位同步动态RAM) 1,600 × 0000'>4Banks × 0000'>4Bits同步0000'>dram0000'>4,600 × 0000'>4位同步动态RAM)的

File Size 2,427.58K  /  49 Page

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    HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V64162

Hyni0000'>x Semiconductor, Inc.
Hyni0000'>x Semiconductor Inc.
HYNI0000'>x[Hyni0000'>x Semiconductor]
Part No. HY57V60000'>41620HGT-6I HY57V60000'>41620HGT-7I HY57V60000'>41620HGT-55I HY57V60000'>41620HGT-5I HY57V60000'>41620HGT-HI HY57V60000'>41620HGLT-HI HY57V60000'>41620HG-I HY57V60000'>41620HGLT-5I HY57V60000'>41620HGLT-8I HY57V60000'>41620HGLT-PI HY57V60000'>41620HGLT-SI HY57V60000'>41620HGT-8I HY57V60000'>41620HGT-KI HY57V60000'>41620HGT-PI HY57V60000'>41620HGLT-KI HY57V60000'>41620HGT-SI HY57V60000'>41620HGLT-55I HY57V60000'>41620HGLT-7I HY57V60000'>41620HGT HY57V60000'>41620HGTP-7I HY57V60000'>41620HGTP-8I
Description S0000'>dram - 0000'>60000'>4mb
0000'>4 Banks 0000'>x 1M 0000'>x 16Bit Synchronous 0000'>dram 0000'>4M 0000'>x 16 SYNCHRONOUS 0000'>dram, 6 ns, PDSO50000'>4
0000'>4 Banks 0000'>x 1M 0000'>x 16Bit Synchronous 0000'>dram 0000'>4M 0000'>x 16 SYNCHRONOUS 0000'>dram, 5 ns, PDSO50000'>4
0000'>x16 S0000'>dram 0000'>x16内存
0000'>4 Banks 0000'>x 1M 0000'>x 16Bit Synchronous 0000'>dram 0000'>4M 0000'>x 16 SYNCHRONOUS 0000'>dram, 0000'>4.5 ns, PDSO50000'>4
CAP 0.01UF 50V 10% 0000'>x7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:0000'>x7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system

File Size 142.41K  /  12 Page

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    KMM5364003CKG KMM5364103CK KMM5364103CKG KMM5364003CK KMM5364103CKVG-5

SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5360000'>4003CKG KMM5360000'>4103CK KMM5360000'>4103CKG KMM5360000'>4003CK KMM5360000'>4103CKVG-5
Description 0000'>4M 0000'>x 36 FAST PAGE 0000'>dram MODULE, 50 ns, SMA72
0000'>4M 0000'>x 36 0000'>dram SIMM using 0000'>4M0000'>x0000'>4 and 16M Quad CAS, 0000'>4K/2K Refresh, 5V 0000'>4米36的0000'>dram上海药物研究所利用0000'>4M0000'>x0000'>46M四中科院K/2K刷新V

File Size 278.03K  /  17 Page

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    Electronic Theatre Controls, Inc.
Part No. EM0000'>488M160000'>40000'>4VTB-75F EM0000'>488M160000'>40000'>4VTB-6F EM0000'>488M160000'>40000'>4VTB-7F
Description 128Mb (2MBank16) Synchronous 0000'>dram
128Mb (2MBank6) Synchronous 0000'>dram 128Mb的(200万Bank6)同步0000'>dram
128Mb (2M??Bank??6) Synchronous 0000'>dram

File Size 254.21K  /  17 Page

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    Infineon
SIEMEns[Siemens Semiconductor Group]
SIEMEns AG
Part No. HYM72V1005GU-60 HYM72V1005GU-50 HYM60000'>4V1005GU-60 HYM60000'>4V1005GU-50 Q67100-Q2179 HM60000'>41005 Q67100-Q2176 Q67100-Q2177 Q67100-Q2178 HYM60000'>4V1005GU-5
Description 1M 0000'>x 72 Bit ECC 0000'>dram Module unbuffered
1M 0000'>x 60000'>4 Bit 0000'>dram Module unbuffered
From old datasheet system
3.3V 1M 0000'>x 60000'>4-Bit EDO-0000'>dram Module 3.3V 1M 0000'>x 72-Bit EDO-0000'>dram Module 1M 0000'>x 72 EDO 0000'>dram MODULE, 60 ns, DMA168
3.3V 1M 0000'>x 60000'>4-Bit EDO-0000'>dram Module 3.3V 1M 0000'>x 72-Bit EDO-0000'>dram Module 1M 0000'>x 60000'>4 EDO 0000'>dram MODULE, 60 ns, DMA168

File Size 73.94K  /  14 Page

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    http://
SIEMEns AG
Part No. HYB310000'>4175BJ-50- HYB310000'>4175BJL-50 HYB310000'>4175BJ-60 HYB310000'>4175BJ-55 HYB310000'>4175BJL-60 HYB310000'>4175BJL-55 Q67100-Q210000'>49 HYB310000'>4175BJ-50
Description High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -0000'>40 to 85 3.3V56亩16位江户的0000'>dram 3.3V56亩16位江户与0000'>dram的低功率版本自刷
3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram 3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram Low power version with Self Refresh
3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram(3.3V 256K×16外延式数据输出(EDO)动态RAM)

File Size 1,310.29K  /  24 Page

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    HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-40 HYB3165805AJ-60 HYB31

Infineon
SIEMEns[Siemens Semiconductor Group]
Part No. HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-0000'>40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-0000'>40 HYB3165805AJ-60 HYB3165805AJ-50 HYB3165805AJ-0000'>40 HYB3160000'>4805ATL-60 HYB3160000'>4805ATL-50 HYB3160000'>4805ATL-0000'>40 HYB3160000'>4805AT-60 HYB3160000'>4805AT-50 HYB3160000'>4805AT-0000'>40 HYB3160000'>4805AJ-60 HYB3160000'>4805AJ-50 HYB3160000'>4805AJ-0000'>40 HYB3160000'>4805AJ HB60000'>4805A
Description 0000'>4M 0000'>x 16 Bit 0000'>4k EDO 0000'>dram Low Power
8M 0000'>x 8 Bit 0000'>4k EDO 0000'>dram
8M 0000'>x 8 Bit 8k EDO 0000'>dram
8M 0000'>x 8-Bit Dynamic RAM (0000'>4k & 8k Refresh, EDO-Version)
From old datasheet system

File Size 327.52K  /  29 Page

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    Hitachi,Ltd.
Part No. HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM5118165TT-5 HM5118165TT-6
Description 16M EDO 0000'>dram (1-Mword 0000'>x 16-bit) 1 k Refresh
1M 0000'>x 16 EDO 0000'>dram, 50 ns, PDSO0000'>40000'>4
1M 0000'>x 16 EDO 0000'>dram, 60 ns, PDSO0000'>40000'>4

File Size 344.20K  /  33 Page

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    H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H57V1262GTR-75X H57V1262GTR-75C H57V1262GTR-50J H57V1262GTR-50C H57V1262

HYNI0000'>x SEMICONDUCTOR INC
Part No. H57V1262GTR-500000'>x H57V1262GTR-600000'>x H57V1262GTR-700000'>x H57V1262GTR-750000'>x H57V1262GTR-75C H57V1262GTR-50J H57V1262GTR-50C H57V1262GTR-60J H57V1262GTR-70J
Description 128Mb Synchronous 0000'>dram based on 2M 0000'>x 0000'>4Bank 0000'>x16 I/O
8M 0000'>x 16 SYNCHRONOUS 0000'>dram, 5.0000'>4 ns, PDSO50000'>4
8M 0000'>x 16 SYNCHRONOUS 0000'>dram, 0000'>4.5 ns, PDSO50000'>4

File Size 201.69K  /  13 Page

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For 64m x 4 ddr dram 0 7 ns pdso66 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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