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  80ns Datasheet PDF File

For 80ns Found Datasheets File :: 724    Search Time::1.063ms    
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    K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M
OCR Text ...0s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250s(typ.) - Block Erase time : 2ms (typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Trans...
Description -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 440.97K  /  25 Page

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    L9341 L9341H L9341V 1403

STMICROELECTRONICS[STMicroelectronics]
Part No. L9341 L9341H L9341V 1403
OCR Text ... 200ns min. 200ns min. 0ns min. 80ns min. 80ns max. 2MHz max. 400ns max. 400ns max. 100ns min. 0ns 5/10 L9341 Figure 5: PWM Generation Function Table. Bit 3 - 0 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 11...
Description From old datasheet system
QUAD LOW SIDE DRIVER

File Size 128.79K  /  10 Page

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    RT9602 RT9602CS

ETC
Part No. RT9602 RT9602CS
OCR Text ...th a 40ns propagation delay and 80ns transition time. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use o...
Description DUAL CHANNEL SYNCHRONOUS-RECTIFIED BUCK MOSFET DRIVER

File Size 146.68K  /  7 Page

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    ASI
ETC[ETC]
AUSTIN[Austin Semiconductor]
Part No. AS4LC1M168 AS4LC1M16883C AS4LC1M16
OCR Text ...s (Contact Factory) 70ns access 80ns access * Refresh Rate Standard 16ms period * Packages Ceramic SOJ Ceramic Gull Wing Ceramic LCC MARKING -6 -7 -8 None ECJ No. 506 ECG No. 604 EC No. 213 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc 15 16...
Description 1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH

File Size 192.35K  /  22 Page

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    TLE6280 TLE6280GP

INFINEON[Infineon Technologies AG]
Part No. TLE6280 TLE6280GP
OCR Text ... Dissable = Reset 1.45 / 1.7V 80ns Fig. 4: Block diagram of internal structure of MFP pin Shoot through protection / option As already mentioned, the device has a built-in shoot-through protection, to avoid a simultaneous activation...
Description 3-Phase Bridge Driver IC

File Size 285.75K  /  24 Page

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    CS5106 CS5106LSW24 CS5106LSWR24

CHERRY[Cherry Semiconductor Corporation]
Part No. CS5106 CS5106LSW24 CS5106LSWR24
OCR Text ...ion with Timer, 20mA 5V Output, 80ns PWM propagation delay, and Controlled Hiccup Mode. The CS5106 has junction temperature and supply ranges of -40uC to 125uC and 9V to 16V respectively and is available in the 24 lead SSOP package. Feat...
Description Multi-Feature/ Synchronous plus Auxiliary PWM Controller
Multi-Feature, Synchronous plus Auxiliary PWM Controller

File Size 195.66K  /  12 Page

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    M27C322 M27C322-100F1 M27C322-100F3 M27C322-100F6 M27C322-100P1 M27C322-100P3 M27C322-100P6 M27C322-80F1 M27C322-80F3 M2

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27C322 M27C322-100F1 M27C322-100F3 M27C322-100F6 M27C322-100P1 M27C322-100P3 M27C322-100P6 M27C322-80F1 M27C322-80F3 M27C322-80F6 M27C322-80P1 M27C322-80P3 M27C322-80P6 -M27C322-80P6 -M27C322-100F1 -M27C322-100P1 -M27C322-100F6 -M27C322-80P3 -M27C322-80P1 -M27C322-100P3
OCR Text 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION - Active Current 50mA at 5MHz 1 42 42 s s s s - Stand-by Current 100A s s s 1 PROGRAMMING VOLTAGE: 12V 0.25V PROGRAMMING TIME: 50s/word ELECTRONI...
Description 32 Mbit 2Mb x16 UV EPROM and OTP EPROM 32兆位存储器的2Mb x16紫外线和OTP存储

File Size 111.38K  /  13 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH4S64CBMD-15B MH4S64CBMD-12B MH4S64CBMD-10B MH4S64CBMD-15 MH4S64CBMD-12 MH4S64CBMD-10- MH4S64CBMD MH4S64CBMD-10
OCR Text ...s 0-62 30ns 30ns 30ns 60ns 70ns 80ns 16MByte option rev 1 Check sum for -10 Check sum for -12 Check sum for -15 64-71 72 Manufactures Jedec ID code per JEP-108E Manufacturing location MITSUBISHI Miyoshi,Japan Tajima,Japan NC,USA Germany 73-...
Description 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system

File Size 707.99K  /  47 Page

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    MH4S72CMA-10 MH4S72CMA-12 MH4S72CMA-15 MH4S72CMA

Mitsubishi Electric Semiconductor
Part No. MH4S72CMA-10 MH4S72CMA-12 MH4S72CMA-15 MH4S72CMA
OCR Text ...s 0-62 30ns 30ns 30ns 60ns 70ns 80ns 32MByte option rev 1 Check sum for -10 Check sum for -12 Check sum for -15 64-71 72 Manufactures Jedec ID code per JEP-108E Manufacturing location MITSUBISHI Miyoshi,Japan Tajima,Japan NC,USA Germany 73-...
Description 301989888-BIT (4194304-WORD BY 72-BIT)SynchronousDRAM
From old datasheet system

File Size 682.02K  /  47 Page

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    MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C

Macronix International Co., Ltd.
MCNIX[Macronix International]
Part No. MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12 MX23C8100TC-15
OCR Text ...grade item, and 70ns instead of 80ns in 150ns grade item. The output high Z delay is changed as 20ns instead of 70ns. AC CHARACTERISTICS tOH 10ns-->0ns Undershoot -1.3V 20ns-->-2.0V 20ns Added Package Information Page Date SEP/01/1997 4....
Description 8M-BIT MASK ROM (8/16 BIT OUTPUT) 512K X 16 MASK PROM, 150 ns, PDSO44

File Size 730.39K  /  9 Page

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For 80ns Found Datasheets File :: 724    Search Time::1.063ms    
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