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    APT5022AVR

ADPOW[Advanced Power Technology]
Part No. APT5022AVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.67K  /  4 Page

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    APT5024AVR

ADPOW[Advanced Power Technology]
Part No. APT5024AVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.55K  /  4 Page

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    APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL

ADPOW[Advanced Power Technology]
Part No. APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text ...following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.64K  /  4 Page

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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    APT5030AVR

ADPOW[Advanced Power Technology]
Part No. APT5030AVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.48K  /  4 Page

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    APT5032CVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5032CVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 14A 0.320 Ohm

File Size 60.85K  /  4 Page

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