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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BY8010 BY8012 BY8014 BY8016 BY8000SERIES BY8000_2 BY8000 BY8004 BY8006 BY8008
OCR Text	...a = 6.32 4 2 0 0 100 T amb ( oC) 200 0 0 100 T amb ( oC) 200 BY8004. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a 120 K/W. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. BY8006. a = IF(RMS...
Description	From old datasheet system Fast high-voltage soft-recovery controlled avalanche rectifiers
File Size	54.99K / 10 Page	View it Online	Download Datasheet

				ZARLINK SEMICONDUCTOR INC
Part No.	DES9066101/AC/DGAZ
OCR Text	...ed over the temperature range t amb -55 c to +125 c (see note) and supply voltage range 4.75v to 5.25v. tested at t amb = -55 c and +100 c, v cc = 4.75v and 5.25v. supply current input sensitivity 0.65ghz to 2.8ghz 3.3g...
Description	8802 SERIES, PRESCALER, CDIP8
File Size	561.82K / 6 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	VN10LF
OCR Text	...v continuous drain current at t amb = 25c i d 150 ma pulsed drain current i dm 3a gate source voltage v gs 20 v power dissipation at t amb = 25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical c...
Description	SOT23 N-CHANNEL ENHANCEMENT
File Size	17.07K / 1 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMFPB8032XP
OCR Text	...drain current v gs = -4.5 v; t amb = 25 c; t 5 s [1] - - -3.7 a schottky diode i f forward current t sp 105 c - - 2 a v r reverse voltage t amb = 25 c - - 20 v mosfet transistor static characteristics r dson drain-source on-state resi...
Description	3.7A / 320mV VF P-channel MOSFET
File Size	267.96K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMF87EN
OCR Text	...d drain current v gs = 10 v; t amb = 25 c; t 5 s [1] - - 1.9 a static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 1.7 a; t j = 25 c - 67 80 m [1] device mounted on an fr4 printed-circuit board (pcb), sin...
Description	single N-channel Trench MOSFET
File Size	188.52K / 14 Page	View it Online	Download Datasheet

				NXP
Part No.	PBSS5130QA
OCR Text	...ulsed; t p 300 s; 0.02 ; t amb = 25 c - 160 240 m free datasheet http:/// nxp semiconductors pbss5130qa 30 v, 1 a pnp low vcesat (biss) transistor pbss5130qa all information provided in this document is subject to legal disclaimers...
Description	PNP low VCEsat (BISS) transistor
File Size	257.49K / 17 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	BYW34
OCR Text	...57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw32 v r = v rrm 200 v byw33 v r =...
Description	DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AP, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
File Size	115.91K / 4 Page	View it Online	Download Datasheet

				VISHAY SEMICONDUCTORS
Part No.	BAS385-GS18
OCR Text	...ble absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks bas385 v r = 30 v bas385-gs18 or bas385-gs08 tape a...
Description	0.2 A, SILICON, SIGNAL DIODE
File Size	167.72K / 5 Page	View it Online	Download Datasheet

				NXP
Part No.	PEMD18
OCR Text	...p tot total power dissipation t amb 25 c sot363 [1] - 200 mw sot666 [1] [2] - 200 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb ambient temperature - 65 +150 c per device p tot total power dissipation ...
Description	NPN/PNP resistor-equipped transistors
File Size	76.29K / 10 Page	View it Online	Download Datasheet

For amb Found Datasheets File :: 14141 Search Time::2.047ms
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