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INTEGRATED SILICON SOLUTION INC
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| Part No. |
AS7C251MNTD18A-200TQI
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| OCR Text |
... command and burst write. oe i async asynchronous output enable. i/o pins are not driven when oe is inactive. lbo istatic count mode. whe...page 17 min max min max min max min max clock frequency f max - 250 225 - 200 - 166 mhz cycle time (... |
| Description |
1M X 18 ZBT SRAM, 7.5 ns, PQFP100
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| File Size |
350.92K /
19 Page |
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it Online |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33256NTF18B-65TQI
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| OCR Text |
... command and burst write. oe i async asynchronous output enable. i/o pins are not driven when oe is inactive. lbo istatic selects burst m...page 15. min max min max min max min max cycle time t cyc 7.5 8.5 10 12 ns clock access time t cd ... |
| Description |
256K X 18 ZBT SRAM, 6.5 ns, PQFP100
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| File Size |
410.87K /
18 Page |
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it Online |
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MARVELL SEMICONDUCTOR INC
INTEL CORP
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| Part No. |
LVPXA272FC0312 LVPXA272FC0520 LVPXA273FC0520 LVPXA272FC0416
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| OCR Text |
...e 85 ns initial access 25 ns async page-mode read 14 ns sync read (t chqv ) 52 mhz clk buffered enhanced factory programming (buffered efp): 5 s/byte (typ) buffered programming at 7 s/byte (typ) flash software intel ? fdi, intel ?... |
| Description |
312 MHz, MICROPROCESSOR, PBGA336
520 MHz, MICROPROCESSOR, PBGA336
416 MHz, MICROPROCESSOR, PBGA336
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| File Size |
969.78K /
138 Page |
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it Online |
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INTEL CORP
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| Part No. |
RD38F3040L0YBQ0
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| OCR Text |
...o : 85 ns initial access, 30 ns async page reads; 65 ns initial access, 18 ns async page. sram at 1.8 or 3.0 v i/o: 70 ns initial access. flash performance code segment at 1.8 v i/o: 85 ns initial access; 25 ns async page read; 14 ns syn... |
| Description |
SPECIALTY MEMORY CIRCUIT, PBGA88
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| File Size |
637.33K /
54 Page |
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it Online |
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ALLIANCE SEMICONDUCTOR CORP
INTEGRATED SILICON SOLUTION INC
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| Part No. |
AS7C33256NTD18A-100TQI AS7C33256NTD18A-133TQI AS7C33256NTD16A-133TQC AS7C33256NTD16A-100TQC
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| OCR Text |
... command and burst write. oe i async asynchronous output enable. i/o pins are not driven when oe is inactive. lbo istatic count mode. whe...page 9 min max min max min max clock frequency f max - 166 - 133 - 100 mhz cycle time (pipelined mod... |
| Description |
256K X 18 ZBT SRAM, 12 ns, PQFP100
256K X 18 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 12 ns, PQFP100
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| File Size |
162.82K /
10 Page |
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it Online |
Download Datasheet |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33256NTD18A-183TQC
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| OCR Text |
... command and burst write. oe i async asynchronous output enable. i/o pins are not driven when oe is inactive. lbo istatic count mode. whe...page 9 min max min max min max min max min max clock frequency f max - 200 - 183 - 166 - 133 - 100 m... |
| Description |
256K X 18 ZBT SRAM, 9 ns, PQFP100
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| File Size |
235.40K /
10 Page |
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it Online |
Download Datasheet |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33128NTD36A-100BC AS7C33128NTD36A-166TQC
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| OCR Text |
... command and burst write. oe i async asynchronous output enable. i/o pins are not driven when oe is inactive. lbo istatic count mode. whe...page 9. dc electrical characterist ics for 2.5v i/o operation parameter sym test conditions 166 133 ... |
| Description |
128K X 36 ZBT SRAM, 12 ns, PQFP100
128K X 36 ZBT SRAM, 9 ns, PQFP100
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| File Size |
161.04K /
10 Page |
View
it Online |
Download Datasheet |
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