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Solid State Devices, Inc.
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| Part No. |
SFT2907A
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| OCR Text |
...lcc4 /18 = to-18 features ? bv ceo 60v min. ? fast switching ? high frequency ? high linear gain, low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? replaces 2n2907 types ? design for complimentary use wit... |
| Description |
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR SFT2907A 60伏进步党高速低功率晶体
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| File Size |
40.89K /
2 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
KSC5502DTM
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| OCR Text |
...condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1200 1350 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 600 750 v bv ebo emitter-base breakdown voltage i e =500 a, i c =0 12 13.7 v... |
| Description |
NPN Triple Diffused Planar Silicon Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
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| File Size |
163.67K /
12 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FJL4215RTU 2SA1943RTU
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| OCR Text |
... symbol parameter ratings units bv cbo collector-base voltage -250 v bv ceo collector-emitter voltage -250 v bv ebo emitter-base voltage -5 v i c collector current -17 a i b base current -1.5 a p d total device dissipation(t c =25 c ) dera... |
| Description |
17 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-264AA TO-264, 3 PIN
PNP Epitaxial Silicon Transistor; Package: TO-264; No of Pins: 3; Container: Rail
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| File Size |
449.90K /
6 Page |
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it Online |
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Central Semiconductor, Corp.
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| Part No. |
CMPTA42E
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| OCR Text |
... 250 na i ebo v be =3.0v 100 na bv cbo i c =100a 350 590 500 v bv ceo i c =1.0ma 350 475 450 v bv ebo i e =100a 6.0 8.7 9.6 v v ce(sat) i c =50ma, i b =5.0ma 125 150 350 mv v be(sat) i c =20ma, i b =2.0ma 0.9 v h fe v ce =10v, i c =1.0ma 50... |
| Description |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|叩| 350V五（巴西）总裁| 500mA的一（c）| SOT - 23封装
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| File Size |
112.42K /
2 Page |
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it Online |
Download Datasheet |
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