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20MHZ 1024A ON2287 08190 01089 92U03 4028B EKMS421
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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP40N10E ON2608 ON2607

Motorola, Inc
Part No. MTP40N10E ON2608 ON2607
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
From old datasheet system

File Size 157.60K  /  8 Page

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    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

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    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

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    MTP50N06 MTP50N06V MTP50N06V_D ON2619

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 179.25K  /  8 Page

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    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

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    MTP52N06VL MTP52N06VL_D ON2624 ON2623

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06VL MTP52N06VL_D ON2624 ON2623
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 162.64K  /  8 Page

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    MTP52N06V MTP52N06V_D ON2625 ON2622

ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP52N06V MTP52N06V_D ON2625 ON2622
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
From old datasheet system

File Size 159.45K  /  8 Page

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For calculating Found Datasheets File :: 3352    Search Time::0.859ms    
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