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				STMicroelectronics
Part No.	STW4820 STW4820U4_HF STW4820U4T_HF STW4820U4T/HF STW4820U4/HF
OCR Text	...nfigurable in I2S and PCM) - AB class headset capless stereo amplifier - D class loudspeaker stereo amplifier (2 x 1 W) USB 2.O OTG interface - High-speed (480 Mb/s) OTG transceiver - ULPI interface - VBUS peripheral supply up to 100 mA TVo...
Description	Mixed-signal multimedia and power management IC
File Size	143.01K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G38LS-50 BLF6G38-50
OCR Text	...erformance at Tcase = 25 C in a class-ab production test circuit. Mode of operation 1-carrier N-CDMA[2] [1] [2] [3] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 9 PL(M)[1] Gp (W) 70 14 D 23 ACPR885k ACPR1980k (dBc) -64[3] -49[...
Description	WiMAX power LDMOS transistor
File Size	83.07K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G27S-45 BLF6G27-45
OCR Text	...erformance at Tcase = 25 C in a class-ab production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 7 Gp (dB) 18 D (%) 24 ACPR885k (dBc) -49[2] ACPR1980k (dBc) -64...
Description	WiMAX power LDMOS transistor
File Size	112.72K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G22LS-75
OCR Text	...Tcase = 25 C in a common source class-ab production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 17 Gp (dB) 18.7 D (%) 30.5 IMD3 (dBc) -37.5[1] ACPR (dBc) -41.5[1] ...
Description	Power LDMOS transistor
File Size	74.66K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G10LS-200
OCR Text	...erformance at Tcase = 25 C in a class-ab production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 D (%) 27 ACPR (dBc) -41[1] Test signal: 3GPP; test model 1...
Description	Power LDMOS transistor
File Size	89.13K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLC6G22LS-75 BLC6G22-75
OCR Text	...Tcase = 25 C in a common source class-ab production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 17 Gp (dB) 18.5 D (%) 31 IMD3 (dBc) -37[1] ACPR (dBc) -41[1] Test s...
Description	Power LDMOS transistor
File Size	81.84K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLL1214-35
OCR Text	...p l (w) g p (db) h d (%) pulsed class-ab; t=1ms; d =10% 1200 to 1400 36 35 >13 >43 symbol parameter conditions min. max. unit v ds drain-source voltage - 75 v v gs gate-source voltage - 15 v p tot total power dissipation under rf conditions...
Description	L-band radar LDMOS driver transistor
File Size	94.04K / 8 Page	View it Online	Download Datasheet

				Westermo
Part No.	TD-36-485 TD-36485
OCR Text	...ential environments FCC part 15 Class B EN 50121-4, Railway signalling and telecommunications apparatus IEC 62236-4, Railway signalling and ...AB Declaration of conformity The manufacturer Westermo Teleindustri AB SE-640 40 Stora Sundby, S...
Description	Telephone Model
File Size	1,711.00K / 48 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLL6H0514-25
OCR Text	...ase =25 c; i dq = 50 ma; in a class-ab application circuit. mode of operation f t p d v ds p l g p rl in h d p droop(pulse) t r t f (mhz) ( m s) (%) (v) (w) (db) (db) (%) (db) (ns) (ns) pulsed rf 960 to 1215 128 10 50 25 21 10 58 0.05 8 6...
Description	LDMOS Driver Transistor
File Size	80.78K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF578
OCR Text	...nless otherwise specified; in a class-ab production test circuit. Symbol Parameter Gp RLin D power gain input return loss drain efficiency Conditions PL = 1200 W PL = 1200 W PL = 1200 W Min Typ Max Unit dB % <tbd> 24 <tbd> 25 <tbd> 70 <tbd>...
Description	Power LDMOS transistor
File Size	103.87K / 14 Page	View it Online	Download Datasheet

For class-ab Found Datasheets File :: 4006 Search Time::1.266ms
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