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  compactron dissimilar-double-t Datasheet PDF File

For compactron dissimilar-double-t Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    意法半导
STMicroelectronics N.V.
Part No. M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M28W320EBT85ZB1T M28W320EBB85ZB6T M28W320EBB85N6T M28W320EBB90N6T M28W320EBB90N1 M28W320EBB90N1T M28W320EB-ZBT M28W320EBB10ZB1 M28W320EBB10ZB6T M28W320EBT10N1 M28W320EBB10N6T -M28W320EBB85N1T
Description Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位(处理器x16插槽,引导块V电源快闪记忆

File Size 305.77K  /  45 Page

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    AWS5506 AWS5506S14 AWS5506_REV_2.1

ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
Part No. AWS5506 AWS5506S14 AWS5506_REV_2.1
Description GaAs IC SPDT Reflective Switch Positive Control DC - 2.5 GHz 0 MHz - 2500 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.1 dB INSERTION LOSS
From old datasheet system
The AWS5506 is a Single Pole Double Throw GaAs MMIC Switch assembled in a SOT-6 plastic package.

File Size 64.18K  /  8 Page

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    GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8170DW72AC-250 GS8170DW36AC-333 GS8170DW36AC-300 GS8170DW36AGC-350 GS81

GSI Technology, Inc.
Part No. GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8170DW72AC-250 GS8170DW36AC-333 GS8170DW36AC-300 GS8170DW36AGC-350 GS8170DW72AGC-350 GS8170DW36AGC-350I GS8170DW72AGC-350I GS8170DW36AC-350I GS8170DW72AC-350I GS8170DW72AGC-333 GS8170DW36AGC-333I GS8170DW36AC-333I GS8170DW72AC-333I GS8170DW36AC-250I GS8170DW36AGC-250I GS8170DW72AC-250I GS8170DW36AGC-300I GS8170DW72AC-300I GS8170DW36AC-300I GS8170DW72AGC-300
Description 18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209

File Size 761.08K  /  32 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    Cypress Semiconductor Corp.
Part No. CY8C24794-SPI CY8C24794-SPAX CY8C24794-SPLFX CY8C24794-SPE CY8C24794-SPPX CY8C24794-SPSX CY8C24794-SPPVX CY8C24794-SPC CYPRESSSEMICONDUCTORCORP.-CY8C24794-SPAX
Description Explosion-Proof Limit Switches Series CX: Short Housing: Top Plunger; 1NC 1NO SPDT Snap Action; Number of internal basic switches BZ: 1; 0.75 in - 14NPT conduit
Environmentally sealed limit switch with Leadwire termination, Rotary Roller Lever actuation, Double Pole Double Throw (DPDT) Circuitry, 5 A (Resistive) ampere rating at 28 Vdc, Military Part Number MS21320-2
PSoCTM Mixed-Signal Array PSoCTM混合信号阵列
Environmentally sealed limit switch with Leadwire termination, Rotary Roller Lever actuation, Double Pole Double Throw (DPDT) Circuitry, 5 A (Resistive) ampere rating at 28 Vdc, Military Part Number MS21320-1 PSoCTM混合信号阵列

File Size 331.05K  /  32 Page

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    BCM847DS BCM847BS BCM847BV BCM847BV115

NXP Semiconductors N.V.
Part No. BCM847DS BCM847BS BCM847BV BCM847BV115
Description NPN/NPN matched double transistors; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
   NPN/NPN matched double transistors

File Size 112.56K  /  15 Page

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    GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170DW36C-333 GS8170DW72C-200 GS8170DW72C-250 GS8170DW72C-300 GS8170DW72C-

GSI Technology, Inc.
Part No. GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170DW36C-333 GS8170DW72C-200 GS8170DW72C-250 GS8170DW72C-300 GS8170DW72C-333 GS8170DW36C-300I GS8170DW36C-333I GS8170DW36C-250I GS8170DW36C-200I GS8170DW72C-333I GS8170DW72C-200I
Description 18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209

File Size 820.65K  /  27 Page

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    GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 GS8170DW36C-300I GS8170DW36C-333 GS8170DW36C-333I GS8170DW72C-333

GSI Technology
Part No. GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 GS8170DW36C-300I GS8170DW36C-333 GS8170DW36C-333I GS8170DW72C-333
Description 250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM

File Size 616.27K  /  36 Page

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    BCM857BS BCM857BV BCM857BV115 BCM857DS135 BCM857DS/T2

NXP Semiconductors N.V.
Part No. BCM857BS BCM857BV BCM857BV115 BCM857DS135 BCM857DS/T2
Description PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
   PNP/PNP matched double transistors

File Size 108.64K  /  15 Page

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    GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300I GS8171DW36AC-250 GS8171DW36AC-333 GS8171DW36AC-333I GS8171DW36AC-350

GSI Technology
Part No. GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300I GS8171DW36AC-250 GS8171DW36AC-333 GS8171DW36AC-333I GS8171DW36AC-350I GS8171DW72AC-250I GS8171DW72AC-333I GS8171DW72AC-300I GS8171DW72AC-350 GS8171DW72AC-350I
Description 18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM

File Size 763.93K  /  33 Page

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