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Samsung Electronic
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| Part No. |
K3N6VU4000E-DC
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| OCR Text |
dc cmos mask rom pin name pin function a 0 - a 20 address inputs q 0 - q 15 data outputs ce chip enable oe output enable v cc power v ss ...18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 ce v ss oe q 0 q 8 q 1 q 9 q 4 q 12 q 5 q 13 q 6 v ss q 14 q... |
| Description |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
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| File Size |
45.46K /
3 Page |
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Cystech Electonics Corp...
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| Part No. |
MTB5D0N10RH8-0-T6-G
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| OCR Text |
...10v, r jc =2.5c/w single pulse dc r dson limited 1ms 100 s 10ms 100ms maximum drain current vs case temperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, tj(max... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
941.53K /
10 Page |
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it Online |
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Samsung Electronics
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| Part No. |
K3N4C1000D-DC K3N4C1000D-GC
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| OCR Text |
...outputs * Package -. K3N4C1000D-DC : 42-DIP-600 -. K3N4C1000D-GC : 44-SOP-600
CMOS MASK ROM
GENERAL DESCRIPTION
The K3N4C1000D-D(G)C ...18 Q2 19 Q10 20 Q3 21 Q11 22
...
CE OE BHE CONTROL LOGIC Q0/Q8 Q7/Q15
DIP
SOP
Q8 15 Q1 ... |
| Description |
8M-Bit CMOS Mask ROM
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| File Size |
60.98K /
3 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTA012A02CDN6-0-T1-G
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| OCR Text |
...5v, r ja =62.5c/w single pulse dc 100ms r dson limited 100 s 1ms 1s 10ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v ... |
| Description |
Common Drain Dual N -Channel Enhancement Mode MOSFET
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| File Size |
477.99K /
9 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PIP3202-DC PIP3202-DC_1
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| OCR Text |
DC
DESCRIPTION
Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount...18 20
TYP. 55 55 23 25
MAX. 65 65 28 30
UNIT V V V V
battery to ground 9 V VBG 35 V VL... |
| Description |
From old datasheet system
TOPFET dual high side switch
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| File Size |
44.00K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTN10N65BE3-0-UB-X
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| OCR Text |
...in current(a) r ds( on) limited dc 10 s t c =25c, tj(max)=150c v gs =10v, r jc =0.68c/w single pulse 100ms 10ms 1ms 100 s gate charge characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 qg, total gate charge(nc) v gs , gate-sou... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
465.37K /
10 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTE130N20F3-0-T7-X
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| OCR Text |
...10v, r jc =2.1c/w single pulse dc 100ms r dson limited 10s 100 s 1ms 10ms maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =2.1c... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
399.53K /
9 Page |
View
it Online |
Download Datasheet |
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