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  diode- Datasheet PDF File

For diode- Found Datasheets File :: 167715    Search Time::4.391ms    
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    IRHQ58110N

International Rectifier
Part No. IRHQ58110N
OCR Text ... 1.2 mj dv/dt p eak diode recovery dv/dt ? 6.1 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.89 (typical) g o c...
Description 100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package

File Size 119.67K  /  8 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ... : 2002.10.24 Page No. : 2/3 Diode Capacitance & Reverse-Biased Voltage 100 200 150 Diode Capacitance-Cd (pF) 0 200 400 600 800 1000 Forward Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF (m...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    HD74HCU04 HD74HCU04A

HITACHI[Hitachi Semiconductor]
Part No. HD74HCU04 HD74HCU04A
OCR Text ...* Input terminal has protection diode Function Table Input A H L H : High level L : Low level Output Y L H HD74HCU04A Pin Arrangement 1A 1 1Y 2A 2 3 14 VCC 13 6A 12 6Y 11 5A 10 5Y 9 4A 8 4Y 2Y 4 3A 3Y 5 6 GND 7 (Top v...
Description Hex Inverters

File Size 40.80K  /  9 Page

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    Nexperia
Part No. BUK9M8R5-40H
OCR Text ...g. 14 - 2.1 4.2 nc source-drain diode q r recovered charge i s = 15 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 20 v - 15 - nc downloaded from: http:/// nexperia buk9m8r5-40h n-channel 40 v, 8.5 m? logic level mosfet in lfpak33 symbol ...
Description N-channel 40 V, 8.5 mlogic level MOSFET in LFPAK33

File Size 264.07K  /  11 Page

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    Nexperia
Part No. BUK7M8R5-40H
OCR Text ...g. 14 - 2.6 5.2 nc source-drain diode q r recovered charge i s = 15 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 20 v - 15 - nc downloaded from: http:/// nexperia buk7m8r5-40h n-channel 40 v, 8.5 m? standard level mosfet in lfpak33 symb...
Description N-channel 40 V, 8.5 mstandard level MOSFET in LFPAK33

File Size 266.80K  /  11 Page

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    Alpha & Omega Semiconductor
Part No. AOTF7N60
OCR Text ...s v gs i dm i ar e ar e as peak diode recovery dv/dt t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction temperature. 0.5 65 -- mosfet dv/dt ruggedness dv/dt 50 5 4.8* avalanche current c 135 single pulsed...
Description Single HV MOSFETs (500V - 1000V)

File Size 276.47K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOD7N65
OCR Text ...s v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum case-to-sink a maximum junction-to-case d,f c/w c/w 0.5 0.5 0.7 mj avalanche current c 144 repetitive avalanche energy c derate a...
Description Single HV MOSFETs (500V - 1000V)

File Size 418.96K  /  6 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm f...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm f...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm f...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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