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  dv-l Datasheet PDF File

For dv-l Found Datasheets File :: 24377    Search Time::2.312ms    
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    IRF7Y1405CM IRF7Y1405CM-15

International Rectifier
Part No. IRF7Y1405CM IRF7Y1405CM-15
OCR Text ...ive avalanche energy ? 10 mj dv/dt p eak diode recovery dv/dt ? 1.8 v/ns t j operating junction -55 to 150 t stg storage temperature r...l s + l d total inductance ? 6.8 ? measured from drain lead (6mm/ 0.25in. fr...
Description HEXFET? POWER MOSFET THRU-HOLE (TO-257AA)
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
Avalanche Energy Ratings

File Size 92.80K  /  7 Page

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    International Rectifier, Corp.
Part No. IRF3711STRL
OCR Text ....w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward cu...l" assembly lot code int ernational rectifier logo part number dat e code year 0 = 2000 we e k 0...
Description TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直|已废除一(d)|63AB

File Size 289.08K  /  11 Page

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    STU10NB80

STMicroelectronics
Part No. STU10NB80
OCR Text ...on) = 0.65 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized descript...l thermal resistance junction-case max thermal resistance junction-ambient ...
Description N-channel Power MOSFET

File Size 64.95K  /  5 Page

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    Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Limited
Part No. MB40C218PFQ MB40C218
OCR Text ...T AV SS 7 18 CLK DV SS 8 9 D7 (MSB) 10 D6 11 D5 12 D4 13 D3 14 D2 15 D1 16 D0 (LSB) 17 DV DD 2 MB40C218 s DES...L": VIN1, Input "H": VIN2 Input pin for toggling standby function. Input high signal brings the stan...
Description 30MHz 8-bit A/D Converter (With AMP)

File Size 62.16K  /  11 Page

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    IRKU105

International Rectifier
Part No. IRKU105
OCR Text ...0 to 130 0.1 (5) available with dv/dt = 1000v/ s, to complete code add s90 i.e. irku105/16as90. a mounting compound is recommended and ...l t a r t h s a 0 . 2 k / w 0 . 7 k / w 1 k / w 2 k / w 0 100 200 300 400 500 600 0 40 80 ...
Description ADD-A-pak GEN V Power Modules THYRISTOR

File Size 152.99K  /  8 Page

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    International Rectifier, Corp.
Part No. IRF1310NSTRR
OCR Text ...titive avalanche energy ? 16 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperat...l electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. unit...
Description TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 42A条(丁)|63AB

File Size 183.98K  /  10 Page

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    D3NB50

STMicroelectronics
Part No. D3NB50
OCR Text ...(on) = 2.5 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized descript...l thermal resistance junction-case max thermal resistance junction-ambient ...
Description Search --To STD3NB50

File Size 88.56K  /  6 Page

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    SGS Thomson Microelectronics
Part No. AN1546
OCR Text ...driver for cfl applicationo). t dv/dt is a function of collector peak current snubber capacitor value, and collector voltage for example if ...l f p r ? ? = p (2) r e p r f c l f << ? ? = p 2 1 ' (3) t f 1 = (4) dt dv storage on t t t t / 2 + ...
Description VIPOWER: SELF OSCILLATING CONVERTER USING VK05CFL FOR COMPACT FLUORESCENT LAMPS

File Size 216.91K  /  16 Page

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    NXP Semiconductors N.V.
Part No. BTA312B-800E
OCR Text ...d immunity to false turn-on by dv/dt ? high commutation capability with sensitive gate ? high voltage capability ? planar passivated for v...l latching current v d =12v; i g = 0.1 a; t2+ g+; t j =25c; see figure 8 --25ma v d =12v; i g = 0....
Description 3Q Hi-Com Triac BTA312B-800E<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<,;

File Size 122.57K  /  14 Page

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