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GeneSiC Semiconductor, ...
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Part No. |
MUR2X100A10
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OCR Text |
...ing voltage v dc 1000 v su p er fast recover y rectifier mur2x100a10 maximum ratings conditions maximum dc blocking voltage v dc 1000...recovery time (per leg) t rr 125 ns thermal characteristics * pulse test: pulse width 300 s, duty <... |
Description |
Electrically Isolated Base Plate
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File Size |
333.05K /
3 Page |
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Motorola
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Part No. |
TE53N50E
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OCR Text |
...fers a draintosource diode with fast recovery time. designed for high voltage, high speed switching applications such as power supplies, pwm motor controls and other inductive loads, the avalanche energy capability is specified to eliminate... |
Description |
Search --To MTE53N50E
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File Size |
164.67K /
8 Page |
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it Online |
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
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Part No. |
MTP4N40E MTP4N40E-D
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OCR Text |
... a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diod... |
Description |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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File Size |
239.59K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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