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SKYWORKS SOLUTIONS INC
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| Part No. |
APD0520-219
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| OCR Text |
...ge rating column in table 2 v forward current i f 200 ma operating temperature t op C65 +175 ? c storage temperature t stg C65 +200 ? c note: exposure to maximum rating conditions for extended periods may reduce devic... |
| Description |
50 V, SILICON, PIN DIODE
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| File Size |
427.31K /
7 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SW830
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| OCR Text |
...gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(... |
| Description |
N-channel MOSFET
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| File Size |
345.76K /
5 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
AOT10T60P
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| OCR Text |
...se time turn-on delaytime diode forward voltage dynamic parameters body diode reverse recovery charge body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =10a... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,237.39K /
7 Page |
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it Online |
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Analog Power
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| Part No. |
AM4890N
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| OCR Text |
...v gs = 4.5 v, i d = 1.1 a 1.2 forward transconductance g fs v ds = 15 v, i d = 1.2 a 11 s diode forward voltage v sd i s = 1.3 a, v gs = 0 v 0.8 v total gate charge q g 3.7 gate-source charge q gs 1.3 gate-drain charge q gd 1.8 turn-o... |
| Description |
Dual N-Channel 150-V (D-S) MOSFET
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| File Size |
295.28K /
5 Page |
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it Online |
Download Datasheet |
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