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gate-pulsed Datasheet PDF File

For gate-pulsed Found Datasheets File :: 46961 Search Time::3.218ms
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				HVVi Semiconductors, Inc.
Part No.	HVV1214-100 HVV1214-100-EK
OCR Text	...down Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Gate Quiescent Voltage Threshold ...pulsed conditions at 120W output power measured at the pulsed conditions at 120W output power in a ...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
File Size	784.41K / 5 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN601VK07
OCR Text	...el MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surfa...Pulsed (Note 3) ID Value 60 20 305 800 Units V V mA Thermal Characteristics @TA = 25C unless o...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	236.99K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	..., RDS(on) = 0.8 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt c...Pulsed (Note 1) IRF840B 500 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 ...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPP17N80C3 SPP17N80C307
OCR Text	...t RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved t...Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4A, VDD=50V 51 670...
Description	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
File Size	577.63K / 13 Page	View it Online	Download Datasheet

				Diodes Incorporated http:// Diodes, Inc.
Part No.	DMN601DWK07 DMN601DWK-7
OCR Text	...el MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surfa...Pulsed (Note 3) ID Value 60 20 305 800 Unit V V mA Characteristic Thermal Characteristics Tot...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 3.3V, Full Duplex, 10Mbps, EIA RS-485 Transceiver 305 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	151.29K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLL6H0514L-130 BLL6H0514LS-130
OCR Text	...1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 2 3 2 3 sym112 ...pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; T...
Description	LDMOS driver transistor
File Size	119.08K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STS8DN3LLH5
OCR Text	...ce r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications desc...pulsed) 40 a p tot (2) total dissipation at t c = 25 c 2.7 w derating factor 0.02 w/c t j t stg op...
Description	Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET?V Power MOSFET
File Size	750.54K / 12 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB12NM50ND09 STF12NM50ND
OCR Text	...ested Low input capacitance and gate charge Low gate input resistance 1 D2PAK DPAK TO-220FP Application Switching applic...pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to ex...
Description	N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
File Size	1,003.82K / 16 Page	View it Online	Download Datasheet

				STMicroelectronics http://
Part No.	STX25NM60ND STP25NM60ND STW25NM60ND STB25NM60ND STF25NM60ND STI25NM60ND
OCR Text	...ested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK ...pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltag...
Description	N-channel 600 V, 0.13 Ω, 21 A FDmesh?/a> II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
File Size	570.93K / 18 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STX25NM50N STP25NM50N STW25NM50N STF25NM50N STB25NM50N-1
OCR Text	...ested Low input capacitance and gate charge Low gate input resistance IPAK TO-247 Application Figure 1. Internal schematic ...pulsed) Total dissipation at TC = 25 C Derating factor V V A A A W W/C V V/ns C C 14 (1) 88 (...
Description	N-channel 500 V, 0.11 Ω, 22 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 N-channel 500 V, 0.11 Ω, 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 22 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	584.68K / 18 Page	View it Online	Download Datasheet

For gate-pulsed Found Datasheets File :: 46961 Search Time::3.218ms
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