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68HC9 6718VXQ M3020P 2A153 HDF1375A NLAOAC2 GC9006 5N50FS
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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...E= 4V) 40 125C DC Cur rent Gain h F E 5 j - a( C/W) hFE - IC Characteristics (Typical) t on*t s tg *t f ( s) t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 3 25C -30C 1 0.5 tf Transient Th...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ...0 250 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current 200 100 150 100 50 50 0 0.1 ...E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : h...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...0 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current 160 100 120 80 50 40 0 0.1 ...E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : h...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SC829 2SC829B 2SC829C

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PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ... MHz pF typ max Unit V V V *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 80A 8 60A 6 40A 50 2SC829 IC -- VCE 60 VCE=10V IC -- VBE Collector powe...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

File Size 54.87K  /  3 Page

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    2SD1010

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...p max 100 1 Unit nA A V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 1 Transistor PC --...E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ... Max 5mA EBO EB DC Current Gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 3mA Max 2.0 V BE B Thermal Resistance AEjc Jun...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 5mA Max 2.0 V BE B Thermal Resistance AEjc Ju...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 6mA Max 2.0V BE B Thermal Resistance AEjc Junc...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...A EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 10mA Max 2.0V BE B Thermal Resistance AEjc Jun...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1030

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1030
OCR Text ...00 0.2 VCE(sat) V MHz *h FE Rank classification Rank hFE Marking Symbol R 400 ~ 800 1ZR S 600 ~ 1200 1ZS T 1000 ~ 2000 1ZT ...E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30...
Description Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

File Size 36.07K  /  2 Page

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