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id-35a Datasheet PDF File

For id-35a Found Datasheets File :: 736 Search Time::1.641ms
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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2048-L 2SK2048-S
OCR Text	...erature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 35 140 20 60 150 -55 ~ +150 Unit V V A A V W C C > Equivalen...35A VGS=10V RGS=25 Min. 30 1,0 Typ. 1,5 10 0,2 10 0,025 0,016 17 1750 800 400 25 100 300 180 ...
Description	N-channel MOS-FET
File Size	205.56K / 2 Page	View it Online	Download Datasheet

				International Rectifier Corp.
Part No.	IRFB3077PBF
OCR Text	...ET D VDSS RDS(on) typ. max. ID D 75V 2.8m: 3.3m: 210A G D S TO-220AB IRFB3077PbF G D S G a te D r a in S o u r...35A BOTTOM 75A TOP 2.0 Energy (J) 600 1.5 400 1.0 0.5 200 0.0 0 20 40 60...
Description	High Efficiency Synchronous Rectification in SMPS 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	310.93K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFD310
OCR Text	...-1 VDSS = 400V RDS(on) = 3.6 ID = 0.35A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed ...
Description	HEXFET? Power MOSFET
File Size	300.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM57064
OCR Text	...RDS(on) 0.012 0.012 0.012 0.013 ID 35A* 35A* 35A* 35A* IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c TO-254AA International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devi...
Description	RADIATION HARDENED POWER MOSFET
File Size	122.21K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BSH301
OCR Text	... 134). SYMBOL VDS VSD VGS VGSth ID RDSon Ptot Note 1. TS is the temperature at the soldering of the drain lead. PARAMETER drain-source volta...35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGA...
Description	Dual N-channel enhancement mode MOS transistor
File Size	36.10K / 5 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BSP254 BSP254A BSP254_A_CNV_2
OCR Text	...RENCE DATA SYMBOL VDS VGSO Yfs ID RDS(on) Ptot PARAMETER drain-source voltage gate-source voltage forward transfer admittance drain current...35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGA...
Description	From old datasheet system P-channel enhancement mode vertical D-MOS transistor
File Size	60.27K / 12 Page	View it Online	Download Datasheet

				Philips
Part No.	BSS87
OCR Text	... REFERENCE DATA SYMBOL VDS VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) total powe...35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGA...
Description	N-channel enhancement mode
File Size	49.12K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FDD068AN03L FDU068AN03L FDD068AN03
OCR Text	...(ON) = 5.7m (Typ.), VGS = 4.5V, ID = 35A * Qg(5) = 24nC (Typ.), VGS = 5V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Applications * 12V Automotive Load Control * ...
Description	N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m N-Channel PowerTrench MOSFET 30V, 35A, 6.8mз
File Size	232.24K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPI35N10 SPP35N10 SPB35N10
OCR Text	... Product Summary VDS R DS(on) ID 100 44 35 P-TO220-3-1 V m A Type SPP35N10 SPB35N10 SPI35N10 Package P-TO220-3-1 P-TO...35A, VDS =80V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operati...
Description	SIPMOS Power-Transistor
File Size	477.25K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5M3710
OCR Text	...VDSS 100V RDS(on) 0.03 ID 35A* Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combin...
Description	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.03ohm, Id=35A) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.03ohm，身份证\u003d 35A条）
File Size	112.29K / 7 Page	View it Online	Download Datasheet

For id-35a Found Datasheets File :: 736 Search Time::1.641ms
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