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Xian Semipower Electron...
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| Part No. |
SW2N10
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| OCR Text |
...h ruggedness r ds( on ) (max0.24 ? )@v gs =10v gate charge (typical 13 nc) improved dv/dt capability 100% avalanche...5a 0.20 0.24 ? v gs =4.5v, i d =2a 0.22 0.24 ? dynamic characteristics c is... |
| Description |
N-channel SOT-23 MOSFET
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| File Size |
420.54K /
5 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
KSH112ITU
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| OCR Text |
....30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) d-pak
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild d... |
| Description |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251 IPAK-3
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| File Size |
102.10K /
7 Page |
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it Online |
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Shenzhen Winsemi Microe...
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| Part No. |
WFF15N60
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| OCR Text |
... features ? 15a,600v, r ds(on) (max0.52 ? )@v gs =10v ? ultra-low gate charge(typical 36nc) ? fast switching capability ? 100%avalanche test...5a g s d operation in this area is limited by r ds(on) 1 0 u s 1 m s 100us 1 0 m s 100m s d c 1 0 ... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
220.87K /
8 Page |
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it Online |
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Shenzhen Winsemi Microe...
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| Part No. |
WFP13N50C
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| OCR Text |
... features ? 13a,500v, r ds(on) (max0.49 ? )@v gs =10v ? ultra-low gate charge(typical 37nc) ? fast switching capability ? 100%avalanche test...5a g s d - 7 5 - 5 0 - 2 5 0 2 5 5 0 1 0 0 1 2 5 1 5 0 7 5 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
214.54K /
8 Page |
View
it Online |
Download Datasheet
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