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For mobility Found Datasheets File :: 592 Search Time::3.204ms
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				List of Unclassifed Manufacturers ETC TRANSCOM
Part No.	TC1301
OCR Text	...aAs Pseudomorphic High Electron mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power ampl...
Description	Low Noise and Medium Power GaAs FETs
File Size	204.99K / 6 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text	...oped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS a...
Description	SUPER LOW NOISE HJ FET
File Size	327.26K / 7 Page	View it Online	Download Datasheet

				California Eastern Labs NEC
Part No.	NE33200 NE33200M NE33200N
OCR Text	...s layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliabil...
Description	SUPER LOW NOISE HJ FET
File Size	82.89K / 7 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text	...oped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS a...
Description	SUPER LOW NOISE HJ FET
File Size	214.82K / 7 Page	View it Online	Download Datasheet

				http:// MIMIX[Mimix Broadband]
Part No.	CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00D0 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0
OCR Text	...aAs Pseudomorphic High Electron mobility Transistor (pHEMT) High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA 0.3 dB Noise Figure at 2 GHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600 m Gate Width: 50 Output Impedance Exce...
Description	0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package
File Size	321.06K / 17 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	NE429M01 NE429M01-T1
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES * * * Super low noise figure & High associated gain NF = 0.9 dB...
Description	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	48.86K / 12 Page	View it Online	Download Datasheet

				Silicon Laboratories
Part No.	AN137
OCR Text	...iven by the need for untethered mobility and ease of use, many systems rely on rechargable bat- * teries as their primary power source. The battery charging circuitry for these systems is typically implemented using a fixed-function IC to c...
Description	LITHIUM ION BATTERY CHARGER USING C8051F300
File Size	283.75K / 36 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FHX45X
OCR Text	...FHX45X is a Super High Electron mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well suited for telecommunication, DBS, TVRO, VSAT or o...
Description	GaAs FET & HEMT Chips
File Size	57.81K / 4 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries]
Part No.	AFM04P2-000
OCR Text	...e Coefficient Pinch-off voltage mobility degradation fitting parameter Slope parameter of pinch-off voltage Power law parameter Subthreshold slope gate parameter Subthreshold slope drain parameter Slope of drain characteristics in the satur...
Description	Ka Band Power GaAs MESFET Chip
File Size	40.99K / 3 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD1500P100
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (PHEMT), featuring a 0.25 m by 1500 m Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimi...
Description	1W PACKAGED POWER PHEMT
File Size	179.40K / 3 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::3.204ms
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