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    1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT

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MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. 1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT3 1SMB40AT3 1SMB58AT3 1SMB50AT3 1SMB6.5AT3 1SMB7.0AT3 ON0030 1SMB90AT3 1SMB100AT3 1SMB10AT3 1SMB110AT3 1SMB11AT3 1SMB120AT3 1SMB12AT3 1SMB130AT3 1SMB13AT3 1SMB150AT3 1SMB160AT3 1SMB170AT3 1SMB17AT3 1SMB20AT3 1SMB26AT3 1SMB28AT3 1SMB33AT3 1SMB43AT3 1SMB45AT3 1SMB48AT3 1SMB60AT3 1SMB64AT3 1SMB7.5AT3 1SMB70AT3 1SMB75AT3 1SMB78AT3 1SMB8.0AT3 1SMB8.5AT3 1SMB85AT3 1SMB9.0AT3
OCR Text ...ied reverse voltage to assure a non-conductive condition (See Note 1). V(BR)min This is the minimum breakdown voltage the device will exhibit and is used to assure that conduction does not occur prior to this voltage level at 25C. VC Maximu...
Description From old datasheet system
600 WATT PEAK POWER
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    5962F9675601VPA HS-1120RH FN4101 HFA1100IJ HFA11XXEVAL

INTERSIL[Intersil Corporation]
Part No. 5962F9675601VPA HS-1120RH FN4101 HFA1100IJ HFA11XXEVAL
OCR Text ...enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HS-1120RH in various gains. Although the bandwidth dependency on closed loop gain isn't as severe as that of a voltage feedback amplifier, th...
Description Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust(抗辐射超高速电流反馈放大器(可调节漂移
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust
From old datasheet system

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    AN246

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. AN246
OCR Text ... MISMATCHES Since a driver has non-zero output impedance, its impedance along with the line impedance form a voltage divider. The incident ...sensitive asynchronous inputs and has non-monotonic edges. Several termination schemes can be used d...
Description Transmission lines and terminations with Philips Advanced Logic families

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    APT5010B2LC APT5010LLC

ADPOW[Advanced Power Technology]
Part No. APT5010B2LC APT5010LLC
OCR Text ...ase for 10 Sec. (Repetitive and Non-Repetitive) 4 EL IM Gate-Source Voltage Continuous IN TYP MAX UNIT Volts Amps 5...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S...
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ... 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/C C Amps mJ -55 to 150 1800 STATIC ELECTRICAL CHARACTE...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text .../C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRI...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text .../C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRI...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ... 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/C C Amps mJ -55 to 150 1800 STATIC ELECTRICAL CHARACTE...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ... 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text ... 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS...Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website ...
Description POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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