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  one-bank Datasheet PDF File

For one-bank Found Datasheets File :: 10303    Search Time::6.046ms    
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    K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size 125.57K  /  10 Page

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    K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size 130.10K  /  11 Page

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    K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size 111.63K  /  11 Page

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    K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size 116.54K  /  11 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size 196.59K  /  14 Page

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    K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size 128.76K  /  11 Page

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    K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text ... CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are mu...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size 127.15K  /  10 Page

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    LC72346 LC72346W LC72347W LC72347

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC72346 LC72346W LC72347W LC72347
OCR Text ...serial I/O ports) * Serial I/O: One system (LC72347) Package Dimensions unit: mm 3190-SQFP64 [LC72346W, 72347W] 12.0 10.0 0.18 1.25...BANK DATA LATCH BUS DRIVER DATA LATCH BUS DRIVER / / BUS DRIVER S13/PH0 S14/PH1 S15/PH2 S1...
Description Ultralow-Voltage ETR Controller with On-Chip LCD Driver 超低电压东突控制器的片上LCD驱动
File Size 93.42K  /  12 Page

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    MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM
OCR Text ...8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any...bank operation controlled by BA0,1(Bank Address) /CAS latency- 2/3(programmable) Burst length- 1/2/4...
Description 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
File Size 588.19K  /  55 Page

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For one-bank Found Datasheets File :: 10303    Search Time::6.046ms    
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