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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
STY25NA60 6064
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Description |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE power MOSFET N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE power MOSFET From old datasheet system N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE power MOSFET N-CHANNEL power MOSFET
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File Size |
81.63K /
8 Page |
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it Online |
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Microsemi, Corp. Advanced power Technology Ltd. ADPOW[Advanced power Technology]
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Part No. |
1214-300M
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Description |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF power TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
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File Size |
117.23K /
4 Page |
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it Online |
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Analog Devices, Inc.
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Part No. |
EVK75-050 2DI75S050A
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Description |
TRANSISTOR | BJT power MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT power MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五(巴西)总裁| 75
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File Size |
51.39K /
1 Page |
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it Online |
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Price and Availability
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