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  pulse-30a Datasheet PDF File

For pulse-30a Found Datasheets File :: 7198    Search Time::0.703ms    
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    60CTT015

VISHAY SEMICONDUCTORS
IRF[International Rectifier]
Part No. 60CTT015
OCR Text ...and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 5s Sine or 3s Rect. pulse TJ = 25 C, IAS = 2 Amps, L = 4.5 mH Current decaying line...30A @ 60A @ 30A @ 60A TJ = 25 C TJ = 125 C VR =10VDC(test signal range100KHz to1MHz)25C Measured lea...
Description 30 A, 15 V, SILICON, RECTIFIER DIODE, TO-220AB
TRENCH SCHOTTKY RECTIFIER
15V 60A Trench Schottky Discrete Diode in a TO-220 package

File Size 65.48K  /  5 Page

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    CPU165MK

IRF[International Rectifier]
Part No. CPU165MK
OCR Text .../s -- A/s TJ = 25C -- TJ = 125C Pulse width 5.0s, single shot. Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0. Pulse width 80s; duty factor 0.1%. Refer to S...
Description IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

File Size 76.58K  /  2 Page

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    HGTP12N60D1

INTERSIL[Intersil Corporation]
Part No. HGTP12N60D1
OCR Text ... TL NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. INTERSIL VmCORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027...
Description 12A/ 600V N-Channel IGBT
12A, 600V N-Channel IGBT

File Size 31.28K  /  4 Page

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...on is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS ...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...on is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 12A, L = 500H. 3. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVC...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND

INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
Part No. HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text ...on is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25 . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS...
Description From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247

File Size 86.05K  /  7 Page

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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ...on is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDI...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ...on is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS ...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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    IRFU2405 IRFR2405

IRF[International Rectifier]
Part No. IRFU2405 IRFR2405
OCR Text ...r Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Ju...30A 2 www.irf.com IRFR/U2405 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ...
Description Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A)
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?)

File Size 125.44K  /  10 Page

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    IRFU2407 IRFR2407

IRF[International Rectifier]
Part No. IRFU2407 IRFR2407
OCR Text ...r Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Ju...30A ISD 25A, di/dt 290A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRFR/U2407 1000 V...
Description Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=75V Rds(on)=0.026ohm Id=42A)
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?)

File Size 125.42K  /  10 Page

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For pulse-30a Found Datasheets File :: 7198    Search Time::0.703ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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