|
|
|
INTERSIL[Intersil Corporation]
|
Part No. |
BUZ73A
|
OCR Text |
...verse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction...8A, dISD/dt = 100A/s, VR = 100V TC = 25oC TEST CONDITIONS MIN TYP 1.4 200 0.6 MAX 5.8 23 1.7 UNITS A... |
Description |
5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
|
File Size |
42.24K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
MORE Semiconductor Comp...
|
Part No. |
MSN0608W MSN0608W-SOP8
|
OCR Text |
... notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to produ... |
Description |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
File Size |
581.36K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
Cystech Electonics Corp...
|
Part No. |
MTB015N10QQ8
|
OCR Text |
...g -55~+150 c note : *1 . pulse width limited by maximum junction temperature. *2. 100% tested by conditions of l=2...8a dynamic qg (v gs =10v) *1, 2 - 49.9 - qg(v gs =4.5v) *1, 2 - 33.7 - qgs *1, 2... |
Description |
N-Channel Enhancement Mode Power MOSFET
|
File Size |
458.54K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
CET[Chino-Excel Technology]
|
Part No. |
CEF08N5
|
OCR Text |
...rwise noted)
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
Symbol
a
Condition
VDD =5...8A VGS = 10V, VDS = 10V VDS = 50V, ID = 6A VDD =250V, ID = 8A, VGS = 10V RGEN=9.1
500 25
V A 1... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
File Size |
40.81K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
CET[Chino-Excel Technology]
|
Part No. |
CEU9926 CED9926
|
OCR Text |
...E CHARACTERISTICS a
6
Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
30 ...8A VGS=4.5V
800
C, Capacitance (pF)
600 400
Ciss
Coss 200 Crss
0 0 5 10 15 20
V... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
File Size |
55.17K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
CDIL ETC[ETC] List of Unclassifed Manufacturers
|
Part No. |
CJF6668
|
OCR Text |
...on (for 1sec, R.H.<30% ,Ta=25C; Pulse Test: Pulse Width <300s, Duty Cycle<2%) (2) Pulse Test : Pulse Width =5ms, Duty Cycle<10%
Continent...8A, VCE=4V IC=10A, VCE=3V IC=3A, IB=6mA IC=5A, IB=0.01A IC=8A, IB=80mA IC=10A, IB=0.1A IC=5A, IB=0.0... |
Description |
PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR
|
File Size |
169.38K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
Zetex Semiconductor PLC ZETEX[Zetex Semiconductors]
|
Part No. |
ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
|
OCR Text |
...10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d = 0.02. Refer to Transient Thermal...8A V GS = 4.5V, I D = 5.3A
S
V DS = 15V, I D = 5.8A
1800 289 178
pF pF pF
V DS = 25V,... |
Description |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET N & P-channel MOSFET
|
File Size |
183.69K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|