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    MT8941 MT8941AE MT8941AP

MITEL[Mitel Networks Corporation]
Part No. MT8941 MT8941AE MT8941AP
OCR Text ...ction CS F0b (DPLL #2) speed-up region correction slow-down region tCS no-correction tCSF DPLL #1: tCS = 4 x TP12 0.5 x TP12 DPLL #2: tCS = 512 x TP16 0.5 x TP16 tCSF = 766 x TP16 where, TP12 is the 12.352 MHz master clock oscil...
Description CMOS ST-BUS⑩ FAMILY Advanced T1/CEPT Digital Trunk PLL
CMOS ST-BUS FAMILY Advanced T1/CEPT Digital Trunk PLL

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    MXL1016 MXL1016CN8 MXL1016CS8 MXL1016MJ8 MXL1016-MXL1116 MXL1116CS8 MXL1116CN8

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MXL1016 MXL1016CN8 MXL1016CS8 MXL1016MJ8 MXL1016-MXL1116 MXL1116CS8 MXL1116CN8
OCR Text ... with the outputs in the active region, which greatly reduces output instability common with slow-moving input signals. In addition, an output latch (LE) is provided. For lower-power, higher-performance comparators, see the MAX912/MAX913 du...
Description Ultra-Fast Precision TTL Comparators COMPARATOR, 3500 uV OFFSET-MAX, 10 ns RESPONSE TIME, PDIP8

File Size 41.02K  /  4 Page

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    R2658P R2658

HAMAMATSU[Hamamatsu Corporation]
Part No. R2658P R2658
OCR Text region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared region, etc. FEATURES High QE in Near IR region ..................
Description PHOTOMULTIPLIER TUBES

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    RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM

FAIRCHILD[Fairchild Semiconductor]
Part No. RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM
OCR Text ...TANCE MAY LIMIT CURRENT IN THIS region 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 125 TC, CASE TEMPERATURE (oC) 175 50 10-5 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY PU...
Description 70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

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    SD210DE SST823 SST824 SD5001N SD5401CY SST215

LINEAR[Linear Integrated Systems]
Part No. SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text ...ess creates a thin selfaligning region of p-type material, isolating the source from the drain region. The very short channel length that results between the two junction depths produces extremely low sourceto-drain and gate-to-drain capaci...
Description Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

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    SI9424 SI9424DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI9424 SI9424DY
OCR Text ...AIN CURRENT (A) Figure 1. On-region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 ID= -4A 0.08 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -8A VGS= -10V RDS(ON), ON RESISTA...
Description Single P-Channel 2.5V Specified PowerTrench MOSFET

File Size 72.55K  /  5 Page

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    SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z

Fairchild Semiconductor, Corp.
Part No. SI9435 SI9435DY SI9435DYL86Z SI9435DYL99Z
OCR Text ...RCE VOLTAGE (V) Figure 1. On-region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.6 ID = -5.3A VGS = -10V ID = -5.3A 1.4 0.15 1.2 0.1 1.0 0.05 0.8 TA = 125 C TA = 25 C o o ...
Description GP RELAY P沟道MOSFET的逻辑电平的PowerTrench
5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SO-8
P-Channel Logic Level PowerTrench MOSFET

File Size 95.95K  /  5 Page

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    VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1
OCR Text ...e device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature th...
Description "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II? FULLY AUTOPROTECTED POWER MOSFET

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