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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S18140HR3
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| OCR Text |
... 1805 to 1880 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 vo... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
407.60K /
12 Page |
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MOTOROLA INC
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| Part No. |
MRF5S19150S
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| OCR Text |
...om 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance for v dd = 28 volts, p out = 32 watts, i dq = 1400 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is?95 cdma (pilot, sy... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
454.89K /
12 Page |
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it Online |
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Motorola
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| Part No. |
MRF6S21100H MOTOROLAINC-MRF6S21100HSR3
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| OCR Text |
... 2110 to 2170 MHz. Suitable for tdma, cdma and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - cdma Performance f... |
| Description |
2170 MHz, 23 W Avg., 28 V, 2 x W?cdma Lateral N?Channel RF Power MOSFET
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| File Size |
406.27K /
12 Page |
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it Online |
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Freescale Semiconductor
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| Part No. |
MRF6P21190HR6
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| OCR Text |
... 2110 to 2170 MHz. Suitable for tdma, cdma and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - cdma Performance: ... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
422.69K /
12 Page |
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it Online |
Download Datasheet |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S19060NBR1 MRF6S19060NR1
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| OCR Text |
... 1930 to 1990 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 vo... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
613.40K /
16 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MRF5P21180
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| OCR Text |
... 2110 to 2170 MHz. Suitable for tdma, cdma and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-cdma Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 21... |
| Description |
2170 MHz, 180 W AVG., 2 x W?cdma, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
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| File Size |
410.25K /
8 Page |
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it Online |
Download Datasheet |
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