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    BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI

BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text ... options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4025 is a high performance, very low power CMOS Static Ra...18 address inputs select one of the 262,144 x 16-bit words in the RAM. This address input incorporat...
Description Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开
LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8

File Size 187.58K  /  11 Page

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    BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI

BSI[Brilliance Semiconductor]
Part No. BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text ... options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV4020 is a high performance, ultra low power CMOS Static R...18 address inputs select one of the 262,144 x 16-bit words in the RAM. This address input incorporat...
Description Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

File Size 209.23K  /  11 Page

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    HY62UF16101C HY62UF16101CLLF HY62UF16101CLLF-I HY62UF16101CSLF HY62UF16101CSLF-I

Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
Part No. HY62UF16101C HY62UF16101CLLF HY62UF16101CLLF-I HY62UF16101CSLF HY62UF16101CSLF-I
OCR Text x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 History Divide output load into two factors - tCLZ,tOLZ...18 19 20 21 22 23 READ CYCLE tRC Read Cycle Time tAA Address Access Time tACS Chip Select Access Tim...
Description 64Kx16bit full CMOS SRAM

File Size 168.25K  /  10 Page

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    HY62UF16201A HY62UF16201A-I

HYNIX[Hynix Semiconductor]
Part No. HY62UF16201A HY62UF16201A-I
OCR Text x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 History Draft Date Remark 06 07 08 Divide output ...18 19 20 21 22 23 READ CYCLE tRC Read Cycle Time tAA Address Access Time tACS Chip Select Access Tim...
Description 128Kx16bit full CMOS SRAM

File Size 251.98K  /  11 Page

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    IDT72V15160 IDT72V19160 IDT72V19320 IDT72V16320 IDT72V14320 IDT72V15320 IDT72V16160 IDT72V17160 IDT72V17320 IDT72V18160

IDT[Integrated Device Technology]
Part No. IDT72V15160 IDT72V19160 IDT72V19320 IDT72V16320 IDT72V14320 IDT72V15320 IDT72V16160 IDT72V17160 IDT72V17320 IDT72V18160 IDT72V18320
OCR Text ...PRS RCLK REN OE D0 - Dn Data In x16, x32 FIFO ARRAY Q0 - Qn Data Out x16, x32 WRITE CONTROL RESET LOGIC READ CONTROL * * ** * ...18 19 20 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 VCC OE VCC Q0 Q1 GND GND ...
Description 3.3V MULTIMEDIA FIFO 16 BIT V-III 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY
3.3V MULTIMEDIA FIFO 16 BIT V-III, 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY

File Size 219.81K  /  26 Page

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    IDT72V15165 IDT72V15165L15TFI IDT72V11165 IDT72V11165L15TFI IDT72V12165L15TFI IDT72V13165 IDT72V13165L15TFI IDT72V14165

IDT[Integrated Device Technology]
Part No. IDT72V15165 IDT72V15165L15TFI IDT72V11165 IDT72V11165L15TFI IDT72V12165L15TFI IDT72V13165 IDT72V13165L15TFI IDT72V14165 IDT72V14165L15TFI IDT72V12165 IDT72V13165L15TFI8
OCR Text ... FIFO ARRAY D0 - D15 Data In x16 OE Q0 - Q15 Data Out x16 RESET LOGIC FLAG OUTPUTS RS EF HF FF 6359 drw01 IDT an...18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 G...
Description 1K x 16 Multimedia FIFO, 3.3V
3.3 VOLT MULTIMEDIA FIFO 256 x 16, 512 x 16, 1,024 x 16, 2,048 x 16, and 4,096 x 16

File Size 113.61K  /  8 Page

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    K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4S641632H K4S640832H-UC75 K4S640432H-UC75 K4S640432H-TC K4S640832H-TL75 K4S641632H-UL75 K4S640432H-UC K4S640432H-UL75 K4S640832H-UL75 K4S641632H-UL60 K4S641632H-UL70 K4S641632H-TC75 K4S641632H-TC70 K4S641632H-TC60
OCR Text x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Elec...18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 3...
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费(符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK

File Size 142.44K  /  14 Page

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    M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. M5M29FB800RV-80 M5M29FT800RV-80 M5M29FB800FP M5M29FB800RV-10 M5M29FB800RV-12 M5M29FB800VP 8MFSTD M5M29FB800FP-12 M5M29FB800VP-12 M5M29FT800FP-12 M5M29FB800VP-10 M5M29FT800FP-10 M5M29FT800VP-10 M5M29FT800RV-10 M5M29FT800RV-12 M5M29FB800FP-10 M5M29FT800VP-12 M5M29FB800VP-80 M5M29FT800FP M5M29FT800RV-80-10 M5M29FT800RV-80-12 M5M29FT800VP M5M29FT800VP-80
OCR Text ...SE FLASH MEMORY x8 ( Bytemode) x16 ( Wordmode) x8 ( Bytemode) x16 ( Wordmode) F0000H-FFFFFH 78000H-7FFFFH E0000H-EFFFFH 70000H-77FFFH D0000H-DFFFFH 68000H-6FFFFH C0000H-CFFFFH 60000H-67FFFH B0000H-BFFFFH 58000H-5FFFFH A0000H-AFFFFH 5000...
Description 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
From old datasheet system
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

File Size 150.57K  /  14 Page

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    MB84VD2002 MB84VD2002-10 MB84VD2003 MB84VD2003-10

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MB84VD2002 MB84VD2002-10 MB84VD2003 MB84VD2003-10
OCR Text ...y. (x8) 16K byte/8K word (x16) 64K byte/32K word (x8) (x16) FFFFFH 7FFFFH FC000H 7E000H 32K byte/16K word F4000H 7A000H 8K by...18 20 8 10 35 45 45 45 45 35 40 12 35 6 5 5 2 2.5 55 3 60 2 5 50 0.6 VCC+0.3* Unit A A mA ILI...
Description 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

File Size 188.20K  /  30 Page

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    SST39VF100 SST39VF100-45-4C-B3I SST39VF100-45-4C-B3K SST39VF100-45-4C-WI SST39VF100-45-4C-WK SST39VF100-45-4I-B3I SST39V

SST[Silicon Storage Technology, Inc]
Part No. SST39VF100 SST39VF100-45-4C-B3I SST39VF100-45-4C-B3K SST39VF100-45-4C-WI SST39VF100-45-4C-WK SST39VF100-45-4I-B3I SST39VF100-45-4I-B3K SST39VF100-45-4I-WI SST39VF100-45-4I-WK SST39VF100-70-4C-B3I SST39VF100-70-4C-B3K SST39VF100-70-4C-WI SST39VF100-70-4C-WK SST39VF100-70-4I-B3I SST39VF100-70-4I-B3K SST39VF100-70-4I-WI SST39VF100-70-4I-WK SST39LF100 SST39LF100-45-4C-B3I SST39LF100-45-4C-B3K SST39LF100-45-4C-WI SST39LF100-45-4C-WK SST39LF100-45-4I-B3I SST39LF100-45-4I-B3K SST39LF100-45-4I-WI SST39LF100-45-4I-WK SST39LF100-70-4C-B3I SST39LF100-70-4C-B3K SST39LF100-70-4C-WI SST39LF100-70-4C-WK SST39LF100-70-4I-B3I SST39LF100-70-4I-B3K SST39LF100-70-4I-WI SST39LF100-70-4I-WK
OCR Text x16) Multi-Purpose Flash SST39LF100 / SST39VF100 SST39LF/VF1003.0 & 2.7V 1 Mb (x16) MPF memories Data Sheet FEATURES: * Organized a...18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Word-Program Time: 14 s (typical) - Chip Rewrit...
Description 1 Mbit (64K x16) Multi-Purpose Flash

File Size 247.78K  /  22 Page

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