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-900v Datasheet PDF File

For -900v Found Datasheets File :: 1633 Search Time::1.844ms
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				Microsemi Corporation
Part No.	APT33N90JCU2
OCR Text	...mosfet power module v dss = 900v r dson = 120m max @ tj = 25c i d = 33a @ tc = 25c k d g s apt33n90jcu2 apt33n90jcu2 ? rev 0 august, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specifi...
Description	ISOTOP Boost chopper Super Junction MOSFET Power Module
File Size	131.72K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT33N90JCCU3
OCR Text	... sic chopper diode v dss = 900v r dson = 120m max @ tj = 25c i d = 33a @ tc = 25c a d g s apt33n90jccu3 apt33n90jccu3 ? rev 0 september, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise s...
Description	ISOTOP? Buck chopper Super Junction MOSFET SiC chopper diode
File Size	133.16K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT33N90JCCU2
OCR Text	... sic chopper diode v dss = 900v r dson = 120m max @ tj = 25c i d = 33a @ tc = 25c k d g s apt33n90jccu2 apt33n90jccu2 ? rev 0 august, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise speci...
Description	ISOTOP? Boost chopper Super Junction MOSFET SiC chopper diode
File Size	133.18K / 5 Page	View it Online	Download Datasheet

				Dynex Semiconductor http://
Part No.	DIM400DDM17-A000 DIM400DDM17-A000-15
OCR Text	...recovery energy IF = 400A VCE = 900V dIF/dt = 3000A/s IC = 400A VGE = 15V VCE = 900V RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 120 250 250 150 100 230 70 mJ ns ns mJ C A mJ Test Conditions Min Typ. 1150 100 Max Units ns ns Tcase = 125C unles...
Description	Dual Switch IGBT Module
File Size	275.12K / 8 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2769-01MR
OCR Text	...che Rated N-channel MOS-FET 900V 5,5 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Rating...
Description	N-channel MOS-FET
File Size	279.53K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSF7N90A
OCR Text	900V * * * * * * * Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25A (Max.) @ VDS = 900V Lower RDS(ON): 1.247 (Typ.) 1 2 3 RDS(O...
Description	N-CHANNEL POWER MOSFET
File Size	244.62K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN
OCR Text	900V 1000V 900V 9.5A 9.5A 8.5A 8.5A W 1.10W W 1.10W W 1.30W W 1.30W POWER MOS IVTM N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TS...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
File Size	60.52K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4631LS
OCR Text	900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * Package Dimensions unit : mm 2079D [2SC4631LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=5.0pF). Full-i...
Description	NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
File Size	28.26K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	...tional reliability C VCES = 900V G E VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A n-channel Benefits * Lower switching losses allow more cost-effective operation and hence efficient replacement of largerdie MOSFETs up to 100kHz...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Eupec
Part No.	BSM200GB170DLC
OCR Text	...nductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj =...
Description	IC,BUFFER/DRIVER,DUAL,4-BIT,HC-CMOS,SOP,20PIN,PLASTIC
File Size	140.19K / 8 Page	View it Online	Download Datasheet

For -900v Found Datasheets File :: 1633 Search Time::1.844ms
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